为提高HgI2晶体气相定向生长效果,在ITO导电玻璃上从DSMO-HgI2-H2O溶液中过饱和析出HgI2外延衬底,进而在外延衬底上气相沉积HgI2多晶薄膜并制备了相应的探测器.利用SEM、XRD分析了薄膜的定向生长特性；以241 Am为放射源,在室温下测试了探测器的探测效率.
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