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场致发射显示器是一种新型的具有竞争力的平板显示器,场致发射阴极是场致发射显示器的重要组成部分.介绍了各种场致发射阴极材料及其特性,分析了场致发射机理及各种场致发射阴极材料最新进展,并简单讨论了场致发射材料国内外开发应用研究现状及差距.

参考文献

[1] SpindtCA;Brodie I;Humphrey L et al.Physical properties of thin film field emission cathode with molybdenum cones[J].Journal of Applied Physics,1976,47(02):5248.
[2] 承欢;江剑平.阴极电子学[M].西安:西北电讯工程学院出版社,1986
[3] RakhshandarooMR;Pang S W .Fabrication of selfaligned field emission devices and effects of surface passivation on emission current[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1998,16(02):765.
[4] Kang SY.;Song YH.;Kim YT.;Cho KI.;Yoo HJ.;Lee JH. .Emission characteristics of TiN-coated silicon field emitter arrays[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1998(2):871-874.
[5] Jessing JR.;Parker DL.;Weichold MH.;Kim HR. .Fabrication and characterization of gated porous silicon cathode field emission arrays[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1998(2):777-779.
[6] Ducroquet F.;Yaradou O.;Vanoverschelde A.;Kropfeld P. .Fabrication and emission characteristics of GaAs tip and wedge-shaped field emitter arrays by wet etching[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1998(2):787-789.
[7] Kozawa T.;Taga Y.;Gotoh Y.;Ishikawa J.;Suzuki M. .Fabrication of GaN field emitter arrays by selective area growth technique[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,1998(2):833-835.
[8] Point x-ray source using graphite nanofibers and its application to x-ray radiography[J].Applied physics letters,2003(10):1637-1639.
[9] ZhouJ;Xu S N et al.Large-area nanowire arrays of molybdenum and molybdenum oxides: symthesis and field emission properties[M].Advanced Materials,2003,15:1835.
[10] Lee CJ.;Lee TJ.;Lyu SC.;Zhang Y.;Ruh H.;Lee HJ. .Field emission from well-aligned zinc oxide nanowires grown at low temperature[J].Applied physics letters,2002(19):3648-3650.
[11] Okanok;Koizumi S;Sinlva S et al.Low-thewshold cold cathodes made of nitrogen-doped chemical-vapor-deposited diarmond[J].Nature,1996,381:140.
[12] GeisMW et al.A new surface electron-emission medhanism in diamond cathodes[J].Nature,1998,393:431.
[13] KockFAM;Garguilo J M et al.Direct correlation of surface morphology with electron emission sites for intrinsic nanocrystalline diamond films[M].Diamond and Related Materials,2004,13:1022.
[14] ChungFY et al.Local electron field emission characteristics or pulse of caster deposited diamondlkecardon film[J].Applied Physics Letters,1996,699:3504.
[15] TalinAA et al.Electron field emission from a-t Cand-tC[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1996,14(03):1720.
[16] ulirJ et al.Study of nitrogen pressure effect on laster deposited amorphous carbon films[J].Thin Solid Films,1997,292:318.
[17] WangQH;Corrigan T D .Field emission from nanotube bunle emitter at low fields[J].Applied Physics Letters,1997,70(24):3308.
[18] JungSS;Kwang S J et al.Study of the field screening effect of highly ordered carbon nanotube arrays[J].Applied Physics Letters,2002,80:2392.
[19] Musatov AL.;Zakharov DN.;Kukovitskii EF.;Zhbanov AI. Izrael'yants KR.;Chirkova EG.;Kiselev NA. .Field electron emission from nanotube carbon layers grown by CVD process[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(1/2):111-119.
[20] MusaI;Munondrasdasa D A I et al.Utralow-threshold field emission from conjugated polymers[J].NATURE,1998,295(24):362.
[21] LoannisK;Akintunde I et al.Field emission form apatterned organic conducting composite[J].Applied Physics Letters,2003,4:2347.
[22] 刘少琼;於黄中;黄河 等.TiO2纳米微粒对聚苯胺性能的影响[J].高等化学学报,2003,23(01):161.
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