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本文采用高分子辅助化学溶液沉积(PACSD)的方法,在双轴织构的Ni-5%W合金基底上制备了Sm0.2Ce0.8O1.9-x(SCO)单一缓冲层,并研究了不同退火温度对缓冲层织构和微结构的影响.研究结果表明,通过1100℃退火处理可以得到织构优良、表面致密平整,厚度可达200nm的SCO单一缓冲层.在该缓冲层上用类似的方法沉积的YBCO薄膜的临界超导转变温度Tc0为87K且Jc可达0.5 MA·cm2(在77 K时).可以认为,Sm掺杂CeO2是制备单一缓冲层的一种有效的适合大规模生产的新途径.

参考文献

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[2] Nemetschek R.;Prusseit W.;Holzapfel B.;Eickemeyer J.;DeBoer B.;Miller U.;Maher E. .Continuous YBa2Cu3O7-tape deposition by thermal evaporation[J].Physica, C. Superconductivity and its applications,2002(Pt.2):880-882.
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