通过对P型太阳能发电用单晶硅进行伏安特性测试,检测其在直流脉冲电压下的通电电流,从进电方式和极性选择方面研究了其特殊的电特性,建立了试验的二极管电阻(DR)电路模型,测试发现P型单晶硅具有单向导通性.随后对电阻率2.1 Ω·cm的P型太阳能发电用单晶硅进行了放电切割,分别抓取了单脉冲放电电压、电流波形,进一步研究了电特性极其复杂的P型单晶硅在硅片实际切割过程中展现出来的特殊放电切割特性,发现P型单晶硅的切割电流波形呈"斜坡"式,切割后的硅片表面形貌呈"贝壳" 状.结果表明,进电有效接触面积越大,P型单晶硅材料的极间电阻就越小,切割电流也就越高,同时对于P型单晶硅放电切割宜采用正极性加工.
Researched the special electrical characteristics of P-type mono-crystalline solar silicon under conduction mode and polarity selection through the volt-ampere property test of it which detected the conduction current of it under D.C. pulse voltage, and the circuit model with diode and resistance was created. The test discovered that P-type mono-crystalline silicon had unidirection continuity. Subsequently, P-type mono-crystalline solar silicon with resistivity of 2.1 Ω·cm was cutting and single pulse voltage and current wave was grabbed respectively, which further researched the special discharge cutting properties of P-type mono-crystalline silicon with extremely complicated electrical characteristics in the actual cutting, and found that current wave of P-type mono-crystalline silicon showed "ramped" and silicon wafer after cutting morphology showed "conchoidal". The results show that the interelectrode resistance of P-type mono-crystalline silicon will decrease as the available area of the electricity interface growing, but the current of cutting will increase, and positive polarity machining is suitable for discharge cutting P-type mono-crystalline silicon.
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