采用超声电化学沉积生长了c轴取向的ZnO薄膜,并与常规电化学沉积生长的ZnO薄膜进行了比较.采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计研究了样品的晶体结构、表面形貌以及光学性能.结果表明,常规电化学沉积生长的ZnO薄膜为纳米柱状结构,随着沉积电压的增加,c轴取向率呈极值变化,热退火可提高这种薄膜的透射率.超声电化学沉积生长的ZnO薄膜,在1.5V低沉积电压下仍为柱状结构,但比未加超声电化学法沉积的样品具有更好的c轴取向,沉积电压增加到2.0V时样品则变为麦粒状结构,热退火后其透射率几乎不变.
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