钢铁,
2005, 40(12): 46-63.
4辊CVC热带钢连轧机轧制过程的仿真
王英睿
1,
, 崔振山
2,
, 袁建光
3,
{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用直流反应磁控溅射法在表面覆盖有Si3N4薄膜的Si(100)基片上制备了不同厚度的氧化钒薄膜.用
光谱式椭偏仪对薄膜的厚度进行了测试.采用四探针测试系统对制备的薄膜进行了方阻和方阻温度系数的分析,发现薄膜的厚度对薄膜的电学特性有很大的影响.实验结果表明氧化钒薄膜的厚度调整可作为调控氧化钒薄膜性能的一种重要工艺手段.","authors":[{"authorName":"魏雄邦","id":"762f112b-1c89-4a89-9cc3-5120dbb1e9c2","originalAuthorName":"魏雄邦"},{"authorName":"吴志明","id":"97a0ee9a-511b-4872-9cac-0fa5046e9e20","originalAuthorName":"吴志明"},{"authorName":"王涛","id":"89204a4d-b507-4b50-b3ee-4546e44ecfc0","originalAuthorName":"王涛"},{"authorName":"许向东","id":"65919f3f-fce6-4719-88b3-5851372bc33f","originalAuthorName":"许向东"},{"authorName":"唐晶晶","id":"bccbc1be-bbcf-4d7e-8e49-a7718eb50710","originalAuthorName":"唐晶晶"},{"authorName":"蒋亚东","id":"d1f36949-8df1-41c8-83ca-06670a98bcee","originalAuthorName":"蒋亚东"}],"doi":"","fpage":"122","id":"c83d1578-462e-49cc-af4e-fd48796fce09","issue":"3","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"5521ba74-5633-4216-bc26-983dafbfde59","keyword":"氧化钒","originalKeyword":"氧化钒"},{"id":"e2900941-f55b-473f-a093-5f0f4520698f","keyword":"薄膜厚度","originalKeyword":"薄膜厚度"},{"id":"c44379e3-9172-4db1-9101-3628feeea058","keyword":"
光谱式椭偏仪","originalKeyword":"光谱式椭偏仪"},{"id":"a7ab9db2-7e8e-48e3-9a6e-dfc778ab33b2","keyword":"方阻","originalKeyword":"方阻"},{"id":"21d49085-4ac2-4bba-add0-d019f032025f","keyword":"方阻温度系数","originalKeyword":"方阻温度系数"}],"language":"zh","publisherId":"cldb200803030","title":"氧化钒薄膜的厚度对薄膜电学特性的影响","volume":"22","year":"2008"},{"abstractinfo":"采用X射线
光谱R(XPS)和
椭偏测试
仪(SE)对GaN材料干氧氧化所得氧化物薄膜的组分、厚度、光学常数等物理特性进行了研究.当氧化温度为900℃、氧化时间为15～240min时,XPS测试结果表明,所得氧化物类型为Ga_2O_3,且由于大量O空位的存在,其表面Ga/O比率约为1.2.SE测试结果表明,GaN线性氧化速率约为40nm/h,呈抛物线生长,最终平均氧化速率约为25nm/h.在300～800nm测试范围内,Ga_2O_3折射率为1.9～2.2,与文献测试结果相符.但在300～400nm测试范围内存在反常色散现象,这与GaN在此波段的强吸收有关.","authors":[{"authorName":"杜江锋","id":"7f2a71f0-269d-49aa-a0d6-f3af498590d0","originalAuthorName":"杜江锋"},{"authorName":"赵金霞","id":"495a816f-fb84-40eb-a025-2a7117283709","originalAuthorName":"赵金霞"},{"authorName":"于奇","id":"9f6bdfed-1537-473f-a163-9563563fdfab","originalAuthorName":"于奇"},{"authorName":"杨谟华","id":"7f9fbdd0-5739-4afa-a2ee-f505cf2d13d6","originalAuthorName":"杨谟华"}],"doi":"","fpage":"12","id":"5442c630-c689-4d82-9928-6c32db00b0c3","issue":"22","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"7332ae16-f612-46ee-a70c-f3a9a825d86a","keyword":"GaN","originalKeyword":"GaN"},{"id":"46b0f20f-37b9-49d7-899b-b162af6d6e4b","keyword":"热氧化","originalKeyword":"热氧化"},{"id":"2664a124-87be-41fb-8dc7-18d6f6882435","keyword":"Ga_2O_3","originalKeyword":"Ga_2O_3"},{"id":"5252de7c-8bf0-41b5-a115-f1dbf3bf01da","keyword":"XPS","originalKeyword":"XPS"},{"id":"6cab49de-0393-4b8d-8f52-2cb12462bcc2","keyword":"SE","originalKeyword":"SE"}],"language":"zh","publisherId":"cldb200922004","title":"GaN基热氧化物的XPS和
椭偏
光谱研究","volume":"23","year":"2009"},{"abstractinfo":"用
椭偏
光谱仪首次在光子能量为２．１～５．２ｅＶ的范围内，测量了不同热处理温度下Ｂａ
０．９Ｓｒ
０．１ＴｉＯ
３（ＢＳＴ）薄膜的
椭偏
光谱，建立适当的拟合模型，并用Ｃａｕｃｈｙ色散模型描述ＢＳＴ薄膜的光学性质，用最优化法获得了所有样品的光学常数（折射率η和消光系数
κ）谱及禁带能
Ｅｇ．比较这些结果，初步得到了ＢＳＴ薄膜的折射率η、消光系数κ和禁带能
Ｅｇ随退火温度变化的变化规律．","authors":[{"authorName":"阳生红","id":"3d07fabb-596f-4c60-9bb2-745b6e2c1761","originalAuthorName":"阳生红"},{"authorName":"李辉遒","id":"4870f521-048a-4580-90ef-f50e62e9ddef","originalAuthorName":"李辉遒"},{"authorName":"张曰理","id":"c31f0e5a-802f-4963-9d05-1f97d8096fc3","originalAuthorName":"张曰理"},{"authorName":"莫党","id":"cb2322d6-b702-48b0-a450-12c8cb48d760","originalAuthorName":"莫党"},{"authorName":"田虎永","id":"2012518f-1c80-4fd5-a99a-cab178e2aa1f","originalAuthorName":"田虎永"},{"authorName":"罗维根","id":"9bcde02a-19eb-49e6-b9eb-10b689c163ac","originalAuthorName":"罗维根"},{"authorName":"蒲兴华","id":"05b66d4c-693a-4d07-a91d-bff22c93faa3","originalAuthorName":"蒲兴华"},{"authorName":"丁爱丽","id":"c5099c78-c35e-45c8-ab88-b9d563830bca","originalAuthorName":"丁爱丽"}],"categoryName":"|","doi":"","fpage":"305","id":"9d784482-ebca-4830-8f90-dbfa9d9b5513","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"5be8b792-f43e-4727-bfc6-156c024feb28","keyword":"
椭偏
光谱","originalKeyword":"椭偏光谱"},{"id":"8387c410-4a03-45e5-9c53-e395c35d1368","keyword":" optical constant spectra","originalKeyword":" optical constant spectra"},{"id":"1f08fc8e-55f4-4903-a467-4b2901d07195","keyword":" BST films","originalKeyword":" BST films"}],"language":"zh","publisherId":"1000-324X_2001_2_16","title":"Ba
0.9Sr
0.1TiO
3薄膜的
椭偏
光谱研究","volume":"16","year":"2001"},{"abstractinfo":"用
椭偏
光谱仪首次在光子能量为2.15.2eV的范围内，测量了不同热处理温度下Ba0.9Sr0.1TiO3(BST)薄膜的
椭偏
光谱.建立适当的拟合模型，并用Cauchy色散模型描述BST薄膜的光学性质，用最优化法获得了所有样品的光学常数(折射率n和消光系数k)谱及禁带能Eg.比较这些结果，初步得到了BST薄膜的折射率n、消光系数k和禁带能Eg随退火温度变化的变化规律.","authors":[{"authorName":"阳生红","id":"3982e0be-5ba2-4bfe-afd7-9ad4549d3423","originalAuthorName":"阳生红"},{"authorName":"李辉遒","id":"c5959acc-38b5-49e6-ae00-decdd7cbc908","originalAuthorName":"李辉遒"},{"authorName":"张曰理","id":"fc92132b-e86c-46a5-8247-4a4d64b86b8f","originalAuthorName":"张曰理"},{"authorName":"莫党","id":"d5585e90-2d5a-4e9e-99e1-ad9f41177bcb","originalAuthorName":"莫党"},{"authorName":"田虎永","id":"4c2e4eed-20cb-4183-ad1b-207916d53936","originalAuthorName":"田虎永"},{"authorName":"罗维根","id":"7ee27e60-a6e3-49d7-8da4-961192ade768","originalAuthorName":"罗维根"},{"authorName":"蒲兴华","id":"77df4962-1faf-4f6a-84c2-ab95e0153492","originalAuthorName":"蒲兴华"},{"authorName":"丁爱丽","id":"d045a96e-1079-456f-9463-13057b3fcf84","originalAuthorName":"丁爱丽"}],"doi":"10.3321/j.issn:1000-324X.2001.02.018","fpage":"305","id":"d678c8ed-f545-49c8-81c6-d75c81d3ad06","issue":"2","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"32750cef-2704-4f4d-b529-42ba9a9314c4","keyword":"
椭偏
光谱","originalKeyword":"椭偏光谱"},{"id":"f68325da-a388-4114-b1af-54f3aa69c705","keyword":"光学常数谱","originalKeyword":"光学常数谱"},{"id":"5f31390f-97a0-4717-8f8d-339d4b6c0c5c","keyword":"BST薄膜","originalKeyword":"BST薄膜"}],"language":"zh","publisherId":"wjclxb200102018","title":"Ba0.9Sr0.1TiO3薄膜的
椭偏
光谱研究","volume":"16","year":"2001"},{"abstractinfo":"用溶胶-凝胶法成功地制备出了退火温度分别为500、600、700、800、900℃的铌酸锶钡(SBN)薄膜;对制备出SBN薄膜分别进行了
椭偏
光谱测量研究,得到了不同退火SBN薄膜
椭偏
光谱参数曲线;并对测得的
椭偏
光谱进行了数值反演计算,得到了不同退火温度的SBN薄膜的光学常数谱.结果发现SBN薄膜的折射率和消光系数都随着退火温度的增高而增大.","authors":[{"authorName":"王正","id":"ac09e6b3-862f-4e63-a410-5de261ba0ab9","originalAuthorName":"王正"},{"authorName":"张曰理","id":"c2ca1b7d-8edb-46a3-acdd-0030026be503","originalAuthorName":"张曰理"},{"authorName":"郭扬铭","id":"becda6d5-ec2e-411a-9e77-9c93003cd484","originalAuthorName":"郭扬铭"},{"authorName":"莫党","id":"04ce2809-e9fb-4205-a4bf-9d1438cb2f5f","originalAuthorName":"莫党"}],"doi":"","fpage":"178","id":"a5aff97d-7917-48b6-8b47-5ac5080d1669","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"018d84ed-4cfc-4019-b4e6-63db8778f4f6","keyword":"SBN薄膜","originalKeyword":"SBN薄膜"},{"id":"d3468c96-bf6d-41de-8be9-b582e3cba02a","keyword":"溶胶-凝胶法","originalKeyword":"溶胶-凝胶法"},{"id":"eb4afc54-947b-4788-ae44-15369c46fb34","keyword":"
椭偏
光谱","originalKeyword":"椭偏光谱"}],"language":"zh","publisherId":"gncl2004z1033","title":"铌酸锶钡薄膜制备及
椭偏
光谱研究","volume":"35","year":"2004"},{"abstractinfo":"用磁过滤真空离子溅射系统,改变加在单晶Si(100)衬底上的衬底偏压,制备不同sp3C键与sp2C键比例的碳薄膜样品.测量了2.0～5.0eV光子能量范围内各个碳薄膜样品的
椭偏
光谱.发现该谱与碳薄膜中的sp键比例有明显的关系.我们提出一种较简便的分析解谱方法,分析所测得的各个
椭偏
光谱,半定量地确定各碳薄膜样品的sp3C键与sp2C键比例.所得结果还与同类样品的拉曼
光谱与吸收
光谱测量结果相比较,结果基本上是一致的.研究结果表明
椭偏
光谱方法可以发展成一种较简便的、对样品无损伤的测定功能碳薄膜中的sp3C键成分的新方法.","authors":[{"authorName":"莫党","id":"cf9186fe-82c5-4614-8af7-6544a8221d0d","originalAuthorName":"莫党"},{"authorName":"李芳","id":"325228c8-4baf-493a-87b9-eeda52659b02","originalAuthorName":"李芳"},{"authorName":"陈第虎","id":"35f4f994-cb11-4a0a-8364-7e03c9a7d750","originalAuthorName":"陈第虎"},{"authorName":"郭扬铭","id":"645af041-cb3d-47ca-9a5e-7483f8cae73e","originalAuthorName":"郭扬铭"},{"authorName":"魏爱香","id":"44dafad1-8b81-42dd-b777-fdcbb8162fb7","originalAuthorName":"魏爱香"}],"doi":"","fpage":"582","id":"9d6d0331-7f98-42af-89f7-df428f4a0c18","issue":"5","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"5e22e6e3-47ec-4a0a-95b8-6c47caadf33d","keyword":"碳薄膜","originalKeyword":"碳薄膜"},{"id":"fd10d8e6-ca31-4e1c-99aa-d7010a6100ac","keyword":"
椭偏
光谱","originalKeyword":"椭偏光谱"},{"id":"32889392-3a58-413f-947e-f3877072855c","keyword":"化学键","originalKeyword":"化学键"}],"language":"zh","publisherId":"gncl200305038","title":"功能碳薄膜化学键成分的
椭偏
光谱研究","volume":"34","year":"2003"},{"abstractinfo":"利用掠射
式椭圆偏振
光谱法现场考察了添加吐温20前后碱性介质中锌电极析氢性能的变化及其对锌电极性能的影响.试验结果表明:吐温20作为电解液添加剂能够影响1mol/dm3KOH溶液中锌电极上的析氢过程,随着吐温20添加浓度的增加,对析氢的抑制作用增加.掠射椭圆偏振参量与电极电位关系进一步表明吐温20对锌电极析氢过程的抑制作用属于几何覆盖效应,同时也表明碱性电解液中添加适宜浓度的吐温20可以有效地抑制阴极过程中锌电极的析氢反应、枝晶形成与电极变形.","authors":[{"authorName":"谢靖宇","id":"0d7670f7-4641-43ff-aa64-434c2520813b","originalAuthorName":"谢靖宇"},{"authorName":"廖世国","id":"50e60afb-947d-4f95-98e2-aef44da490c5","originalAuthorName":"廖世国"}],"doi":"10.3969/j.issn.1001-3660.2007.01.012","fpage":"33","id":"ff81c39e-eb81-44c6-a02f-18047d6773ba","issue":"1","journal":{"abbrevTitle":"BMJS","coverImgSrc":"journal/img/cover/BMJS.jpg","id":"3","issnPpub":"1001-3660","publisherId":"BMJS","title":"表面技术 "},"keywords":[{"id":"c8ee92f8-d691-4aad-940f-1b113e59bfcf","keyword":"掠射
式椭圆偏振
光谱","originalKeyword":"掠射式椭圆偏振光谱"},{"id":"02973286-15a5-4c98-be2e-a190793c5a38","keyword":"吐温20","originalKeyword":"吐温20"},{"id":"49e2ab1e-2426-46d4-a950-05d0ef04d50d","keyword":"锌电极","originalKeyword":"锌电极"},{"id":"213834bf-faac-480e-a196-aca146a6fdb6","keyword":"电解液","originalKeyword":"电解液"},{"id":"bf84ce05-9d02-4a6b-a3ac-290a8c325334","keyword":"添加剂","originalKeyword":"添加剂"}],"language":"zh","publisherId":"bmjs200701012","title":"吐温20对锌电极性能影响的掠射
椭偏法研究","volume":"36","year":"2007"},{"abstractinfo":"对InN/GaN/Al2O3和Ga2O3/GaN/Al2O3多层膜结构进行了椭圆偏振
光谱研究.所有GaN样品均采用MOCVD工艺在蓝宝石(Al2O3)衬底上生长所得.应用多层介质膜模型,在300～800nm测试波长范围内拟合得到了样品各层厚度和折射率色散关系,并与GaN单层膜色散关系相比较,分析了各层膜之间对自身折射率的影响.研究结果表明,InN和Ga2O3表面均存在一个粗糙层,采用有效介质近似模型可使拟合结果更为准确;相对于GaN单层膜结构,InN薄膜使其下面的GaN层折射率明显增大,这应与界面层态密度有关;而在300～400nm测试范围内,Ga2O3折射率出现反常色散现象,InN消光系数亦产生了一个强的吸收峰,这则可能与GaN层在360nm左右存在的一个强吸收(Eg≈3.4eV)有关.","authors":[{"authorName":"杜江锋","id":"9b89e5d4-f17e-45b2-899a-5015a6117024","originalAuthorName":"杜江锋"},{"authorName":"赵金霞","id":"2b40e6c8-891e-4126-a72a-41fa393c3207","originalAuthorName":"赵金霞"},{"authorName":"罗谦","id":"d1e4d146-5fd2-4643-9d44-670033a16654","originalAuthorName":"罗谦"},{"authorName":"于奇","id":"9fde88bd-7b26-49bc-867a-5935879e3084","originalAuthorName":"于奇"},{"authorName":"夏建新","id":"87a27a2d-545a-497c-be85-3a3650cb396c","originalAuthorName":"夏建新"},{"authorName":"杨谟华","id":"277405de-2172-4d0f-8696-fc438dca566e","originalAuthorName":"杨谟华"}],"doi":"","fpage":"878","id":"912cdc3c-36cd-4994-93fd-ff5e6940c967","issue":"5","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"5067d2b4-771b-4502-ae27-31c6319063f4","keyword":"GaN","originalKeyword":"GaN"},{"id":"99f812f3-30e2-4b28-aff3-1e41d810b7cb","keyword":"椭圆偏振
光谱","originalKeyword":"椭圆偏振光谱"},{"id":"7bc2d15f-fff5-4e07-9064-17e8554693ac","keyword":"InN","originalKeyword":"InN"},{"id":"826793a0-2f42-4d3a-972b-a41c45a5ba72","keyword":"Ga2O3","originalKeyword":"Ga2O3"}],"language":"zh","publisherId":"gncl201005038","title":"蓝宝石上GaN基多层膜结构
椭偏研究","volume":"41","year":"2010"},{"abstractinfo":"由于不同型号的不锈钢具有不同的抗腐蚀能力及其他物理特性,为保证在不同环境下使用合适性能的不锈钢产品,需要对不锈钢进行成分分析.采用便携
式X荧光
光谱分析仪,利用经验系数法建立了不锈钢中常见的Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Mo九个元素的定量分析方法.结果表明,使用便携
式能量色散X射线荧光
光谱仪对不锈钢中主要元素进行含量分析并对样品牌号进行快速分析是一种对样品快速分析的测试方法,值得在实际分析中推广.","authors":[{"authorName":"吴敏","id":"7dc41626-812b-4ced-8528-36078ce66bf5","originalAuthorName":"吴敏"},{"authorName":"王俊鹏","id":"5c828dd2-965b-4862-a588-641178a3c45d","originalAuthorName":"王俊鹏"}],"doi":"","fpage":"29","id":"f409676b-a147-46d4-92b8-65c423631377","issue":"1","journal":{"abbrevTitle":"WLCS","coverImgSrc":"journal/img/cover/WLCS.jpg","id":"64","issnPpub":"1001-0777","publisherId":"WLCS","title":"物理测试"},"keywords":[{"id":"be787fce-d08b-4c26-a045-e7169237b710","keyword":"便携
式X荧光
光谱仪","originalKeyword":"便携式X荧光光谱仪"},{"id":"cc27f0c4-cb23-4fbd-b0d1-05dc5cd49022","keyword":"经验系数法","originalKeyword":"经验系数法"},{"id":"28eca000-b48a-48a6-aca7-f116199cee14","keyword":"不锈钢样品","originalKeyword":"不锈钢样品"}],"language":"zh","publisherId":"wlcs201301008","title":"便携
式X射线荧光
光谱仪测定不锈钢样品中的常见金属元素","volume":"31","year":"2013"},{"abstractinfo":"利用单圈内置
式ICP-CVD方法在室温下制备了Si薄膜.在拉曼
光谱、原子力显微镜(AFM)对样品结构分析的基础上,采用对样品结构无损伤的椭圆偏振
光谱(SE)法对样品进行了测量,结合有效介质近似(EMA)模型,对样品的微结构进行了计算拟合.拉曼
光谱及AFM分析表明:样品为具有纳米晶相的Si薄膜;分光椭圆偏振法结合EMA模型对样品微结构的拟合分析得出了同样的结论,说明即使在室温下用ICP-CVD也获得了具有纳米晶相的Si薄膜,薄膜微结构与源气体SiH4浓度有密切关系.说明分光椭圆偏振法是研究薄膜材料的一种有力手段.","authors":[{"authorName":"王晓强","id":"dfbab958-f4b9-4010-ba49-83092d04fb74","originalAuthorName":"王晓强"},{"authorName":"贺德衍","id":"f922137f-1c21-46d3-ab52-11a966cbd57c","originalAuthorName":"贺德衍"},{"authorName":"李明亚","id":"0c67530f-0aa8-4aad-9438-ecab57c93704","originalAuthorName":"李明亚"},{"authorName":"甄聪棉","id":"367cd621-9da2-40d0-870b-f180e79b0b67","originalAuthorName":"甄聪棉"},{"authorName":"韩秀梅","id":"3abcee01-90e0-43b7-9aac-c8be1c70d45b","originalAuthorName":"韩秀梅"}],"doi":"","fpage":"931","id":"077bce68-5ab6-4254-b88e-0eebdc44fe0d","issue":"z1","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"5928f235-9990-4f69-8a9c-6848dc58b00f","keyword":"ICP-CVD","originalKeyword":"ICP-CVD"},{"id":"107252d1-7d2b-4df2-b62e-b3bdcfdddefa","keyword":"Si薄膜","originalKeyword":"Si薄膜"},{"id":"af777886-ca84-4647-8035-0c55efccceda","keyword":"低温生长","originalKeyword":"低温生长"},{"id":"33c827c8-2c39-4422-9392-fea9e3767991","keyword":"
椭偏
光谱法","originalKeyword":"椭偏光谱法"}],"language":"zh","publisherId":"xyjsclygc2007z1263","title":"ICPCVD制备硅薄膜结构的
椭偏
光谱研究","volume":"36","year":"2007"}],"totalpage":3351,"totalrecord":33505}
