分别对两种不同的6H-SiC晶体进行了总通量为5.74×10~(18) n· cm~(-2)、8.2×10~(18) n· cm~(-2)和1.72×10~(19) n· cm~(-2)的不同剂量的中子辐照,利用X射线衍射等手段观测了中子辐照引起的晶体内部损伤.结果表明:两种样品在不同的中子通量辐照下,消除部分原始缺陷的、纯度较高的样品辐照后的内部损伤明显小于纯度较低、内部原始缺陷较多的样品.样品的辐照损伤不仅取决于中子辐照剂量,还取决于其辐照时的成分和结构.晶体的结构缺陷和杂质,作为一种"钉扎",在辐照过程中作用极大,它们导致了晶体的长程缺陷(如位错)的大幅度增加.
Two different 6H-SiC single crystals were neutron-irradiated with different dose of 5.74×10~(18) n·cm~(-2),8.2×10~(18) n·cm~(-2) and 1.72×10~(19) n·cm~(-2) respectively, the damages caused by neutron irradiation were studied by X-ray diffraction. It is found that the damages in the samples with higher purity or in the samples annealed before irradiation are less than that in the samples which are with lower purity or un-annealed. The experimental results indicate that the creations of irradiation damages are not only decided on the irradiation fluences, but also are decided on the structure and the composition of the samples. The inherent defects and the impurity atom play an important role in the irradiation process as the "pinning", which result in the increasing of the long-range defects such as dislocations.
参考文献
| [1] | Fenici P;Rebelo F;Jones A J et al.Current Status of SiC/SiC Composites R&D[J].Nucl Mater,1998,258:215-225. |
| [2] | Heera V;Stoemenos J;Kgler R et al.Amorphization and Recrystallization of 6H-SiC by Ion-beam Irradiation[J].Journal of Applied Physics,1995,77(07):2999-3009. |
| [3] | Morkoc H;Strite S;Gao G B et al.Large-band-gap SiC,Ⅲ-Ⅴ Nitride,and Ⅱ-Ⅳ ZnSe-based Semiconductor-device Technologies[J].Applied Physics,1994,76(03):1363-1390. |
| [4] | Raychaudhuri A K;Takayama T;Rinderer L .Scaling Law for Pinning Forces of Dirty Indium Films[J].Journal of Low Temperature Physics,1980,41:169-177. |
| [5] | 樊慧庆,柯善明,刘来君,陈秀丽.弛豫铁电体的介电老化行为与钉扎效应[C].四川大学学报(自然科学版)（第十一届全国电介质物理、材料与应用学术会议：论文专辑）,2005:102-105. |
| [6] | Takács S .Pinning on Surfaces and Large Grain Boundaries Due to the Transition from Hexagonal to Quadratic Vortex Lattice[J].Czechoslovak Journal of Physics,1984,34:571-580. |
| [7] | 果世驹;赖和怡 .铋系高温超导体的磁通线钉扎与晶体缺陷[J].稀有金属,1994,18(03):208-213. |
| [8] | 姜守振,李娟,陈秀芳,王英民,宁丽娜,于光伟,胡小波,徐现刚,王继杨,蒋民华.6H-SiC晶片的退火处理[J].人工晶体学报,2006(05):949-952. |
| [9] | Seitz C;Magerl A;Hock R et al.Defect Structures in Neutron Irradiated 6H-SiC Studied by X-ray Diffraction Line Profile Analysis[J].Materials Research Society,2001,640:H641-H646. |
| [10] | 丘利;胡玉和.X射线衍射技术及设备[M].北京:冶金工业出版社,1998:172-177. |
| [11] | Glass RC.;Tsvetkov VF.;Carter CH.;Henshall D. .SIC SEEDED CRYSTAL GROWTH[J].Physica status solidi, B. Basic research,1997(1):149-162. |
| [12] | Bódi A C;Csikai J;Kirschner I .Low-dose Irradiation Effects Produced by 14 MeV Neutrons in Different Quality Y-and Tl-based High-Tc Ceramics[J].Zeitschrift für Physik B Condensed Matter,1994,95:181-187. |
| [13] | 王煜明.铜中回复再结晶过程中微量杂质与晶体缺陷的相互作用[J].吉林大学自然科学学报,1980(03):71-78. |
| [14] | 万发荣.金属材料的辐照损伤[M].北京:科学出版社,1993:18-20. |
| [15] | Yano T;Miyazaki H;Akyioshi M et al.X-Ray Diffractometry and High-resolution Electron Microscopy of Neutron-irradiated SiC to a Dluence of 1 9×10~(27) n/m~(-2)[J].Journal of Nuclear Materials,1998,253:78-86. |
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