乙醇钽化学气相沉积制备Ta2O5薄膜研究进展

稀有金属材料与工程, 2007, 36(12): 2075-2079.

乙醇钽化学气相沉积制备Ta2O5薄膜研究进展

杨声海 ^1, , 刘银元 ^2, , 邱冠周 ^3, , 唐谟堂 ^4,

1.中南大学,湖南长沙,410083

2.中南大学,湖南长沙,410083

3.中南大学,湖南长沙,410083

4.中南大学,湖南长沙,410083

基金项目: 国家自然科学基金(50404011) 中国博士后科学基金(20040350187) 国家高技术研究发展计划(863计划)(2007AA03Z425)

关键词：乙醇钽 , 氧化钽薄膜 , 化学气相沉积

Recent Progress in Preparation of Ta2O5 Film by CVD Using Ta(OC2H5)5 as Precursor

Ta2O5薄膜层具有较高的介电常数、折射率以及和ULSI加工过程中的相容性,因而将在硅芯片栅层材料、动态随机存储器、减反膜、气敏传感器、太阳能光伏电池面板介电层等方面得到应用.对以Ta(OC2H5)5为原料,通过常规金属有机化合物气相沉积、光致化学气相沉积、等离子增强化学气相沉积、原子层化学气相沉积和脉冲化学气相沉积法制各Ta2O5薄膜进行了评述,并对这些方法存在的问题进行了分析.

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乙醇钽化学气相沉积制备Ta2O5薄膜研究进展

Recent Progress in Preparation of Ta2O5 Film by CVD Using Ta(OC2H5)5 as Precursor

参考文献