硅酸镓镧晶体研究进展

功能材料, 2003, 34(1): 9-16.

硅酸镓镧晶体研究进展

王继扬 ^1, , 韩荣江 ^2, , 尹鑫 ^3, , 张怀金 ^4, , 胡小波 ^5, , 邵宗书 ^6, , 蒋民华 ^7,

1.山东大学晶体材料国家重点实验室,山东,济南,250100

2.山东大学晶体材料国家重点实验室,山东,济南,250100

3.山东大学晶体材料国家重点实验室,山东,济南,250100

4.山东大学晶体材料国家重点实验室,山东,济南,250100

5.山东大学晶体材料国家重点实验室,山东,济南,250100

6.山东大学晶体材料国家重点实验室,山东,济南,250100

7.山东大学晶体材料国家重点实验室,山东,济南,250100

关键词：硅酸镓镧 , 单晶生长 , 性质

Progress of research on langasite crystal

综述了硅酸镓镧晶体近20年来的研究概况.介绍了这种晶体的结构、生长和性质,讨论和总结了研究进展及趋势.指出采用替代或双掺的方法取代该晶体中的镓及提高晶体生长质量及重复性,降低成本是该晶体实用化的关键.并提出重视在旋光效应存在条件下电光效应的利用.

参考文献

[1]	Kaminsky A A;Sarkisov S E. .[J].Reports of the USSR Academy of Science,1982,264:93.
[2]	Kaminsky A A;Mill B V;Khodzhabagyan G G et al.[J].Physica Status Solidi A,1983(80):387.
[3]	Kaminsky A A;Silvestrova I M;Sarkisov S E et al.[J].Physica Status Solidi A,1983(80):607.
[4]	Kaminsky A A;Belokoneva E L;Mill B V et al.[J].Physica Status Solidi A,1984(86):345.
[5]	Andreev A I;Doubvik M F .[J].Letters to J Theory Physics,1984,10(08):487.
[6]	Bronnikova E G;Larionov I M.Electronic Engineering Series[C]."Radiodetails and Compounds" Issue,1986:63.
[7]	Ssakharov S A;Larionov I M et al.[P].Patent application4886181/22,1990.
[8]	胡少勤 .[J].压电与声光,1999,21(04):299.
[9]	Mill B V;Batashin A V;Khodzhabagyan G G et al.[J].Doklady Akademli Nauk USSR,1982,264:1385.
[10]	Takeda H.;Kumatoriya M.;Shimamura K.;Reiche P.;Fukuda T.;Uecker R. .GROWTH AND CHARACTERIZATION OF NA2CAGE6O14 SINGLE CRYSTALS[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,1997(7):939-945.
[11]	Iwataki T;Ohsato H;Tanada K et al.[J].Journal of the European Ceramic Society,2001,21:1409.
[12]	Uda S;Bungo A;Jian C Y .[J].Japanese Journal of Applied Physics,1999,38:5516.
[13]	Uda S.;Buzanov O. .Growth of a 3 '' langasite crystal with clear faceting[J].Journal of Crystal Growth,2000(1/4):318-324.
[14]	Ssakharov S A;Larionov I M;Medvedev A V.[A].,1992:713.
[15]	Takeda H;Shimamura K;Chani V I et al.[J].Journal of Crystal Growth,1999,197:204.
[16]	Wang S Q;Harada J;Uda S .[J].Journal of Crystal Growth,2000,219:263.
[17]	JungI H;AuhK H .[J].Materials Letters,1999,41:241.
[18]	Jung I H;Shim K B;Auh K H et al.[J].Materials Letters,2000,46:354.
[19]	Lim D S;Yoon I H;Danyluk S .[J].Wear,2001,249:397.
[20]	Aleksandrov K S;Sorokin B P;Turchin P P.[A].,1995
[21]	Kadota M;Nakanishi J;Kitamura T et al.[J].Japanese Journal of Applied Physics,1999,38:3288.
[22]	Haaegawa K;Inagawa K;Koshiba M .[J].Japanese Journal of Applied Physics,2001,40:3751.
[23]	Sato J.;Morikoshi H.;Shimamura K.;Rudolph P.;Fukuda T.;Takeda H. .Czochralski growth of RE3Ga5SiO14 (RE = La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity[J].Journal of Crystal Growth,1998(4):746-753.
[24]	Bohm J.;Hengst M.;Roewer R.;Schindler J.;Heimann RB. .Czochralski growth and characterization of piezoelectric single crystals with langasite structure: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LGN), and La3Ga5.5Ta0.5O14 (LGT) Part I[J].Journal of Crystal Growth,1999(1/2):128-136.
[25]	Kumatoriya M.;Nakanishi J.;Fujii T.;Kadota M.;Sakabe Y.;Sato H. .Crystal growth and electromechanical properties of Al substituted langasite (La3Ga5-xAlxSiO14)[J].Journal of Crystal Growth,2001(1):289-293.

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硅酸镓镧晶体研究进展

Progress of research on langasite crystal

参考文献