阐述了集成电路Cu互连中的技术难题,重点讨论了Cu的扩散问题,综述了扩散阻挡层的研究发展进程,重点介绍了当今研究较多的难熔金属、难熔金属氮化物及其三元结构阻挡层的最新进展情况.研究表明,阻挡层的阻挡性能与制备工艺、薄膜组分及微观结构密切相关,其失效机制多为高温下阻档层晶化所产生的晶界为Cu扩散提供了快速通道,掺入Si或其它原子的难熔金属氮化物由于其较高的晶化温度和良好的阻挡性能正成为研究热点.
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