欢迎登录材料期刊网

材料期刊网

高级检索

Motion of misfit dislocation in an Ni/Ni(3)Al interface is studied in periodic simulation cells subjected to applied shear stress. Three different motion mechanisms of the misfit dislocation have been observed. The simulation results show that at low stress, the motion of misfit dislocation occurs through the nucleation and propagation of the double kinks; however, at higher stress, the motion of misfit dislocation is obstructed by an intrinsic stacking fault. The simulation results suggest that the stability of the Ni/Ni(3)Al interface strongly relates to the interaction of the misfit dislocations that are perpendicular to each other.

参考文献

上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%