报道了由聚合物前驱体衍生得到的非晶SiCN和SiBCN陶瓷的直流电学特性,硼掺杂引起SiCN陶瓷材料室温电导的增加,在不同的温度区域SiCN和SiBCN陶瓷的电导温度关系出现波动起伏,观察到正的和负的电导温度系数,并对这种现象进行了讨论,拟合数据表明电导温度关系符合Arrhenius模型,表明此种材料是迁移率隙中存在很多缺陷局域态的半导体材料,随着温度升高出现了载流子与声子的相互作用过程.
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