本文研究了Au-In-Au低温金属键合技术，并把它应用到长波长垂直腔面发射激光器（VCSEL）器件结构的制作中。利用该低温金属键合技术不仅有利于提升器件的热学性能，而且有利于提高VCSEL结构中分布布拉格反射腔镜（DBR）的反射率。实验结果表明，InP基外延半腔VCSEL结构成功地在200 ℃金属键合到Si衬底上，键合强度高，键合质量达到了VCSEL器件工艺制作要求。对键合样品光学特性的分析表明，低温金属键合过程不影响量子阱有源区及DBR的光学性质，这对VCSEL器件结构的制作是有利的。这种低温金属键合技术，有望应用在许多半导体光电器件的制作中。
The Au-In-Au low temperature metallic bonding and its application in the structure fabrication of long wavelength vertical cavity surface emitting laser (VCSEL) devices were investigated. The low temperature metallic bonding technic not only improves the thermal characteristic of the bonded devices, but also enhances the reflectivity of the distributed Bragg reflectors (DBR) in the VCSEL structure. The result of Experiments shows that InP based epitaxial VCSEL structure was successfully metallic bonded to the Si substrate at 200 ℃ with high bonding strength, and the bonding quality meets the requirements in the device fabrication of VCSEL. The optical characterization of the bonded samples indicates that the process of low temperature metallic bonding have rarely influence on the optical performance of VCSEL active region and DBR. So this low temperature metallic bonding technic can be used in the structure fabrication of VCSEL devices. And it is expected to be applied in the fabrication of other semiconductor photoelectric devices.
参考文献
| [1] | |
| [2] | |
| [3] | |
| [4] | |
| [5] | |
| [6] | |
| [7] | |
| [8] |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%