采用射频磁控溅射法在ZnO缓冲层上制备了不同Al掺杂量的ZnO（AZO）薄膜。利用X射线衍射（XRD）、扫描电子显微镜（SEM）和光致发光（PL）等表征技术,研究了AZO薄膜的微观结构、表面形貌和发光特性。结果表明,随着Al掺杂量的增加,ZnO薄膜的择优取向性发生了改变,且当Al的掺杂量为0.81%（原子分数）时,（002）衍射峰与其它衍射峰强度的比值达到最大,表明适合的Al掺杂使ZnO薄膜的择优取向性得到了改善。在可见光范围内薄膜的平均透过率超过70%。通过对样品光致发光（PL）谱的研究,发现所有样品出现了3个发光峰,分别对应于以444nm（2.80eV）、483nm（2.57eV）为中心的蓝光发光峰和以521nm（2.38eV）为中心较弱的绿光峰。并对样品的发光机理进行了详细的探讨。
The Al-doped ZnO（AZO） thin films with different Al contents were deposited on ZnO buffer layer by reactive RF magnetron sputtering technology.The microstructure,surface morphology,luminescence properties of the AZO thin films were characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM）and photoluminescence（PL） spectrum,respectively.The results revealed that the preferred orientation of ZnO films became with increasing Al doping concentration.And as Al doping concentration was 0.81at% the ratio of intensity of（002） to other peaks attained maximum,which indicated that appropriate Al-doping can improve the preferred orientation of ZnO films.The average transmittance was above 70%in the visible range.Two blue peaks located at 444nm（2.80eV） and 483nm（2.57eV） and weak green peak located at about 521nm（2.38eV） were observed from the PL spectra of the four samples and the mechanism of luminescence was discussed.
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