材料期刊网

Two serials of Eu3+ doped AlN films are prepared by means of magnetron RF reactive sputtering under different RF powers and N-2/(N-2 + Ar) ratios. XRD analysis indicates that the films change from amorphous to c-axis oriented crystalline as the RF power increases or as the N-2/(N-2 + Ar) ratio decreases. Lower N-2/(N-2 + Ar) ratio and higher RF power enhance the deposition rate and crystallinity. The grain size and surface roughness observed by SEM and AFM increase with the increase of the RF power. The emission from 5 Do to F-7(J) (J = 0-4) of Eu3+ is observed in the PL spectra for all the crystalline films, and the D-5(0) to F-7(2) transition of the films grown at 300 W has double exponential decays, 38 and 161 mu s. The crystalline quality of the films improves the photoluminescence intensity. (C) 2005 Elsevier B.V. All rights reserved.