The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure. The growth temperature of films was 100℃, 250℃, 400℃ and 550℃. The structure and composition were analysised by Raman scattering. The poly-crystal peak and crystal peak of Ge were observed in these films. The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400℃. The peak of acoustic phonons of Ge was 98 cm-1 and that of Si was 170 cm-1.
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