以单晶Si(111)为基底, 采用双槽法电结晶制备了Co/Pd纳米多层膜, 使用电化学石英晶体微天平(EQCM)精确测定沉积过程中Co和Pd膜的质量随沉积时间的变化．通过电位阶跃法探讨了沉积层晶体成核机理, 得到Co和Pd电结晶初期均为三维瞬时成核过程．X射线衍射(XRD)研究表明, Co和Pd的结晶与生长显示择优取向, 出现了111Co-Pd的合金峰. 并用物性测量系统(PPMS)测试了Co/Pd多层膜的磁性能, 所得磁滞回线表明: 矫顽力随着多层膜磁性层厚度的减小而增大,可达到9.0104 A/m
Multilayered Co/Pd nanostructure films are deposited on monocrystalline silicon(111) by using double-bath method and the technological conditions are determined. The mechanism of the growth kinetics for Co and Pd layers have been studied ,It is showed that the growth kinetics for Co and Pd are consistent with progressive nucleation.The mass change of layers are exactly measured by EQCM . XRD results suggest that the multilayer have good crystal lattice，and alloy-intermediate of Co and Pd are also found .In addition，hysteresis loops are measured by PPMS at room temperature .The result showed that : with decrease of Co thickness ,coercive force was increased and which up to 1130 Oe.
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