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CIGS薄膜太阳能电池的缓冲层为低带隙CIGS吸收层与高带隙ZnO窗口层之间形成过渡,减少两者带隙的晶格失配和带隙失调,并可防止溅射ZnO窗口层时给CIGS吸收层带来损害等,对提高CIGS薄膜太阳能电池效率起了重要作用.介绍了CIGS薄膜太阳能电池缓冲层材料的分类和制备工艺,主要阐述了CdS、ZnS及In2S3薄膜缓冲层材料及化学水浴法、原子层化学气相沉积法、金属化合物化学气相沉积法等制备工艺的研究现状,最后指出CIGS太阳能电池缓冲层在制备工艺、环境保护及大规模工业化生产中遇到的问题,并展望了其发展方向.

参考文献

[1] NeelkanthGDhere .TowardGW/yearofCIGSproductionwithinthenextdecade[J].SolarEnergyMaterSolarCells,2007,91(15-16):1376.
[2] WagnerS;ShayJL;MiglioratoP .CuInSe2/CdSheterojunctionphotovoltaicdetectors[J].Applied Physics Letters,1974,25:434.
[3] MickslsenRA;ChenWS.PolycrystallinethinfilmsCuInSe2solarcells[A].San Diego,California,USA,1982
[4] PotterRR;EberspacherC;FabickLB.DeviceanalysisofCuInSe2/(Cd,Zn)S/ZnOsolarcells[A].LasVegas:IEEEPiscataway,1985:659.
[5] IngridRepins;MiguelAContreras et al.19.9%efficientZnO/CdS/Cu(In,Ga)Se2solarcellwith81.2%fillfactor[J].ProgPhotcvolt ResAppl,2008,16:235.
[6] Semiconductor-Today .ZSWraisesitsthin-filmsolarcellefficiencyrecordto20.3%[EB/OL].http://www.semiconductor-today.com/news_items/2010/AUG/ZSW_230810.htm
[7] Jean-Francois Guillemoles;Leeor Kronik;David Cahen;Uwe Rau;Axel Jasenek;Hans-Werner Schock .Stability Issues of Cu(In,Ga)Se_2-Based Solar Cells[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,2000(20):4849-4862.
[8] HerreroJ;GutieArrezMT;Guillen(A)nC et al.Photovoltaicwindowshychemicalbathdeposition[J].Thin Solid Films,2000,361362:28.
[9] PeterArmentEschbach .Investigationofbufferlayersincopperindiumgalliumseleniumsulfursolarcells[D].Washington:WashingtonStateUniversity,2002.
[10] Yamada A;Matsubara K;Sakurai K;Ishizuka S;Tampo H;Fons PJ;Iwata K;Niki S .Effect of band offset on the open circuit voltage of heterojunction CuIn1-xGaxSe2 solar cells[J].Applied physics letters,2004(23):5607-5609.
[11] 敖建平,孙云,刘琪,何青,孙国忠,刘芳芳,李凤岩.CIGS电池缓冲层CdS的制备工艺及物理性能[J].太阳能学报,2006(07):682-686.
[12] 李巍,方小红.CdS薄膜的化学水浴法制备及其性能表征[C].第28届全国化学与物理电源学术年会论文集,2009:385-388.
[13] 张险峰,张弓,庄大明.溶液pH值对化学浴沉积CdS薄膜性能的影响[J].太阳能学报,2009(07):870-873.
[14] 崔岩,介万奇,高俊宁,查钢强,何鉴波.pH值对CBD-CdS薄膜性能的影响[J].功能材料,2009(02):197-200.
[15] 薛玉明,孙云,何青,刘芳芳,李长键,汲明亮.CdS薄膜的结构特性及其对Cu(In,Ga)Se2(CIGS)薄膜太阳电池的影响[J].半导体学报,2005(02):225-229.
[16] 段宇波,张弓,庄大明.水浴温度对化学浴沉积CdS薄膜性能的影响[J].中国表面工程,2010(05):21-26.
[17] 欧阳珉路 .CdS纳米薄膜的制备及CdS复合薄膜在太阳能电池中的应用[D].华中师范大学,2009.
[18] 刘琪,冒国兵,敖建平.化学水浴沉积时间对CdS薄膜性质的影响[J].功能材料,2007(06):968-971.
[19] 曹萌,吴杰,孙艳.酸性条件下水浴沉积时间对硫化镉薄膜特性的影响[J].上海有色金属,2010(04):163-166.
[20] 周向东,李子亨,李志有.化学沉积法制备CdS纳米薄膜及成膜机理[J].吉林大学学报(理学版),2007(01):116-120.
[21] 敖建平,孙云,何青,孙国忠,刘芳芳,李凤岩.CBD法制备CIGS太阳电池缓冲层CdS薄膜的研究[C].第八届全国光伏会议暨中日光伏论坛,2004
[22] 武莉莉,蔡伟,张静全,郑家贵,蔡亚平,黎兵,邵烨,冯良恒.CBD法制备的CdS薄膜结构及性能的研究[C].中国第六届光伏会议论文集,2000:71-75.
[23] Gao XD;Li XM;Yu WD .Morphology and optical properties of amorphous ZnS films deposited by ultrasonic-assisted successive ionic layer adsorption and reaction method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(1/2):43-47.
[24] Hariskos D;Spiering S;Powalla M .Buffer layers in Cu(In,Ga)Se-2 solar cells and modules[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(0):99-109.
[25] 曹章轶,徐传明,王小顺,叶晓军.化学水浴法制备Cu(In,Ga)Se2薄膜电池ZnS缓冲层的研究[C].第十届中国太阳能光伏会议论文集,2008:557-561.
[26] ZhanJing et al.AstudyofpreparationofZnSthinfilmbyCBD[J].JXinyangNormalUniversity:NatSciEd,2006,19(04):111.
[27] ContreraMA;NakadaT;HongoM.ZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mosolarcellwith18.6%efficiency[A].Osaka,Japan,2003:570.
[28] BhattacharyaRN;ContrerasMA;TeeterG .18.5%cop-perindiumgalliumdiselenide(CIGS)deviceusingsingle-layer,chemical-bath-depositedZnS(O,OH)[J].Japanese Journal of Applied Physics,2004,43(11):L1475.
[29] GoraisS;GuHaP;GanguliD et al.Chemicalsynthesisofβ-In2S3poweranditsopticalcharacterization[J].Materials Chemistry and Physics,2003,82:874.
[30] GaoZhihua;WangHao.ChemicalbathdeceptionIn2S3bufferlayerofCuInS2filmsolarcells[A].,2010
[31] 黄六一,栾兆菊,王峰,孟亮.化学水浴沉积时间对In2S3薄膜性能的影响[C].第七届中国功能材料及其应用学术会议论文集,2010:255-257.
[32] LokhandeCD;EnnaoouiA;PatilPS et al.Chemicalbathdepositionofindiumsulphidethinfilmspreparationandcharacterization[J].Thin Solid Films,1999,340(1-2):18.
[33] NegamiT;AoygiTSatoh.Cd-freeCIGSsolarcellsfabricatedbydryprocess[A].New Orleans,2002:656.
[34] SiebentrittS;KampschulteT;BauknechtA et al.Cd-freebufferlayerforCIGSsolarcellspreparedbyadryprocess[J].SolarEnergyMaterSolarCells,2002,70:447.
[35] PlatzerBjorkmanC;LuJ et al.InterfacestudyofCuInSe2/ZnOand(CuIn,Ga)Se2/ZnOdevicesusingALDZnObufferlayer[J].Thin Solid Films,2003,431-432:321.
[36] OhtakeY;ChaisitsakS et al.CharacterizationofZnInxSeythinfilmasabufferlayerforhighefficiencyCu(In,Ga)Se2thinfilmsolarcellsJapan[J].Journal of Applied Physics,1998,37:3220.
[37] JeanRousset et al.HighefficiencycadmiumfreeCu(In,Ga)Se2thinfilmsolarcellsterminatedbyanelectrodepositedfrontcontact[J].SolarEnergyMaterSolarCells,2011,95:1544.
[38] Spiering S.;Hariskos D.;Powalla M.;Naghavi N.;Lincot D. .CD-free Cu(In,Ga)Se-2 thin-film solar modules with In2S3 buffer layer by ALCVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(0):359-363.
[39] ChangCC;PanFM;ChenCW .Effectofsurfacereductiontreatmentsofplasma-enhancedatomiclayerchemicalvapordepositedTaNxonadhesionwithcopper[J].Journal of the Electrochemical Society,2010,157:60.
[40] StringFellowGB.Organometallicvapor-phaseepitaxy:Theoryandpractice[M].Waltham:AcademicPress,1999
[41] ArtaudMC;OuchenF;MartinL et al.CuInSe2thinfilmsgrownbyMOCVD:Characterization,firstdevices[J].Thin Solid Films,1998,324:115.
[42] Barreau N.;Bernede JC.;Marsillac S.;Amory C.;Shafarman WN. .New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(0):326-329.
[43] Islam, M. M.;Ishizuka, S.;Yamada, A.;Sakurai, K.;Niki, S.;Sakurai, T.;Akimoto, K. .CIGS solar cell with MBE-grown ZnS buffer layer[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(6/7):970-972.
[44] ErnitsK;BremaudD et al.CharacterizationsofultrasonicallysprayedInxSybufferlayersforCu(In,Ga)Se2solarcells[J].Thin Solid Films,2007,515:6051.
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