本文通过水热法在u-GaN(undoped GaN)/Al2 O3和p-GaN/Al2O3衬底上制备了ZnO纳米棒阵列.利用X射线衍射仪(XRD)、高分辨X射线衍射仪(HRXRD)、场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和光致发光谱(PL)对样品进行表征,研究在无种子层和金属催化剂情况下u-GaN/Al2 O3和p-GaN/Al2O3衬底对ZnO纳米棒生长的影响.结果表明,在u-GaN和p-GaN上生长的ZnO纳米棒均为六方纤锌矿结构.在p-GaN上生长的ZnO纳米棒直径较细且密度更大,这可能是由于p-GaN界面比较粗糙,界面能量较大,为ZnO的生长提供了更多的形核区域;与生长在u-GaN上的ZnO纳米棒阵列相比,p-GaN上所沉积的ZnO纳米棒在378.3 nm处有一个较强的近带边发射峰,且峰强比较大,说明在p-GaN上所制备的ZnO纳米棒的晶体质量和光学性能更好.
参考文献
| [1] | Won Il Park;Gyu-Chul Yi.Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN[J].Advanced Materials,20041(1):87-90. |
| [2] | Li, QC;Kumar, V;Li, Y;Zhang, HT;Marks, TJ;Chang, RPH.Fabrication of ZnO nanorods and nanotubes in aqueous solutions[J].Chemistry of Materials,20055(5):1001-1006. |
| [3] | Michael S. Arnold;Phaedon Avouris;Zheng Wei Pan;Zhong L. Wang.Field-Effect Transistors Based on Single Semiconducting Oxide Naobelts[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,20033(3):659-663. |
| [4] | Mofor AC;Bakin A;Chejarla U;Schlenker E;El-Shaer A;Wagner G;Boukos N;Travlos A;Waag A.Fabrication of ZnO nanorod-based p-n heterojunction on SiC substrate[J].Superlattices and microstructures,20071/6(1/6):415-420. |
| [5] | Qiaobao Zhang;Honghui Guo;Zengfang Feng;Lingling Lin;Jianzhang Zhou;Zhonghua Lin.n-ZnO nanorods/p-CuSCN heterojunction light-emitting diodes fabricated by electrochemical method[J].Electrochimica Acta,201017(17):4889-4894. |
| [6] | Sun XW;Huang JZ;Wang JX;Xu Z.A ZnO nanorod inorganic/organic heterostructure light-emitting diode emitting at 342 nm[J].Nano letters,20084(4):1219-1223. |
| [7] | N. Rajeswari Yogamalar;Arumugam Chandra Bose.ZnO-Based pn Homo-Junction Fabricated by Spin Coating Method[J].Science of advanced materials,20121(1):44-53. |
| [8] | Jae;Min Jang;Jin;Yeol Kim;Woo;Gwang Jung.Synthesis Of Zno Nanorods On Gan Epitaxial Layer And Si (100) Substrate Using A Simple Hydrothermal Process[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,200823(23):8524-8529. |
| [9] | K. P. O'Donnell;M. E. White;S. Pereira;M. F. Wu;A. Vantomme;W. Van Der Stricht;K. Jacobs.Photoluminescence Mapping and Rutherford Backscattering Spectrometry of InGaN Epilayers[J].Physica status solidi, B. Basic research,19991(1):171-174. |
| [10] | Maldonado A.;Canetas-Ortega J.;Zironi E.P.;Hernandez R.;Patino R.;Solorza-Feria O.;Asomoza R..Effect of the pH on the physical properties of ZnO:In thin films deposited by spray pyrolysis[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,19994(4):331-344. |
| [11] | Morin, S.A.;Jin, S..Screw dislocation-driven epitaxial solution growth of ZnO nanowires seeded by dislocations in GaN substrates[J].Nano letters,20109(9):3459-3463. |
| [12] | A. Dadgar;M. Poschenrieder;J. Blasing;K. Fehse;A. Diez;A. Krost.Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ Si_(x)N_(y) masking[J].Applied physics letters,200220(20):3670-3672. |
| [13] | Aleksandra B. Djurisic;Yu Hang Leung.Optical Properties of ZnO Nanostructures[J].Small,20068/9(8/9):944-961. |
| [14] | Defect-Related Emissions and Magnetization Properties of ZnO Nanorods[J].Advanced functional materials,20107(7):1161. |
| [15] | Vanheusden K.;Seager CH.;Tallant DR.;Voigt JA.;Gnade BE.;Warren WL..MECHANISMS BEHIND GREEN PHOTOLUMINESCENCE IN ZNO PHOSPHOR POWDERS[J].Journal of Applied Physics,199610(10):7983-7990. |
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