氨化Si基Ga2O3/In2O3制备GaN薄膜

功能材料, 2007, 38(10): 1632-1634.

氨化Si基Ga2O3/In2O3制备GaN薄膜

薛成山 ^1, , 王福学 ^2, , 庄惠照 ^3, , 张晓凯 ^4, , 艾玉杰 ^5, , 孙丽丽 ^6, , 陈金华 ^7, , 秦丽霞 ^8,

1.山东师范大学,半导体所,山东,济南,250014

2.山东师范大学,半导体所,山东,济南,250014

3.山东师范大学,半导体所,山东,济南,250014

4.山东师范大学,半导体所,山东,济南,250014

5.山东师范大学,半导体所,山东,济南,250014

6.山东师范大学,半导体所,山东,济南,250014

7.山东师范大学,半导体所,山东,济南,250014

8.山东师范大学,半导体所,山东,济南,250014

基金项目: 国家自然科学基金(90201025;90301002)

关键词： GaN , Ga2O3/In2O3 , 氨化 , 磁控溅射

Formation of GaN films by ammoniating Ga2O3 films on In2O3 layer eeposited on Si(111) substrates

研究了Ga2O3/In2O3 膜反应自组装制备GaN薄膜,再将Ga2O3/In2O3膜在高纯氨气气氛中氨化反应得到GaN薄膜,用X射线衍射 (XRD),傅里叶红外吸收(FTIR),扫描电镜(SEM)和透射电镜(TEM)对样品进行结构、形貌的分析.测试结果表明,用此方法得到了六方纤锌矿结构的GaN多晶膜,且900℃时成膜的质量最好.

参考文献

[1]	Nakamura S .[J].Science,1998,281:956.
[2]	Fasol G .[J].Science,1996,272:1751.
[3]	马洪磊,杨莺歌,刘晓梅,刘建强,马瑾.GaN薄膜的研究进展[J].功能材料,2004(05):537-540,544.
[4]	Nakada Y;Aksenov L .[J].Applied Physics Letters,1998,6:73-75.
[5]	Chen P;Zhang R;Zhao Z M J et al.[J].Journal of Crystal Growth,2001,225:150-154.
[6]	Polyakov A Y;Govorkov et al.[J].Solid-State Electronics,2001,45:249-253.
[7]	Sun C J;Yang J W;Chen Q et al.[J].Applied Physics Letters,1996,68:1129.
[8]	Dong Zhihua;Xue Chengshan et al.[J].Physics E,2005,27:32-37.
[9]	Hamdani F;Botchkarev A;Kim W;Morkoc H;Yeadon M;Gibson JM;Tsen SCY;Smith DJ;Evans K;Litton CW .Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy[J].Applied physics letters,1997(4):467-469.
[10]	Tian Dengheng;Xue Chengshan et al.[J].Matters Letters,2006,60:1229-1232.
[11]	Amano H;Sanaki N;Akaski I .[J].Applied Physics Letters,1986,48:353-355.
[12]	魏芹芹;薛成山;孙振翠等.[J].稀有金属材料与工程,2005,34:313-315.
[13]	Boo JH.;Ho W.;Rohr C. .MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer[J].Journal of Crystal Growth,1998(0):439-444.
[14]	Sun Y.;Sonoda N.;Miyasato T. .Outdiffusion of the excess carbon in SiC films into Si substrate during film growth[J].Journal of Applied Physics,1998(11):6451-6453.
[15]	Ding Ruiqin;Wang Hao .[J].Journal of Chemical Physics,2002,77:841.

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氨化Si基Ga2O3/In2O3制备GaN薄膜

Formation of GaN films by ammoniating Ga2O3 films on In2O3 layer eeposited on Si(111) substrates

参考文献