用直流磁控溅射方法制备了Ta(x nm)/Ni65Co35(40 nm)双层薄膜(x = 0, 1, 2, 3, 4, 5 nm)，研究了Ta种子层不同制备工艺条件对Ni65Co35 (40 nm)薄膜的各向异性磁电阻(AMR)和矫顽力的影响; 通过X射线衍射(XRD)对Ni65Co35薄膜的微结构进行了分析.结果表明，适当的Ta种子层的厚度和较高的溅射速率有利于Ni65Co35薄膜(111)织构形成，并能显著提高Ni65Co35膜薄的AMR值和磁传感元件的灵敏度.
Ta(x nm)/Ni65Co35 (40 nm) bilayers films (x = 0, 1, 2, 3, 4, 5 nm) have been prepared by DC magnetron sputtering. The effects of the thickness and deposition rate of Ta seed layer on anisotropic magnetoresistance(AMR) and coercivity of Ni65Co35 (40 nm) layer were investigated.XRD and magneto-test showed that a suitable thickness and higher deposition rate of Ta layer could promote the formation of Ni65Co35 layer with (111) texture, and remarkably increase the AMR value of Ni65Co35 layer and the sensitivity of magnetic sensor element.
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