超晶格半导体材料广泛用于热电、光电、微电子器件,研究它的热导率和传热性能很有必要.本文采用热阻串联模型计算Si/Ge超晶格热导率,在模型中考虑界面影响以及声子透射率随波长的变化.在固定周期厚度时,Si和Ge厚度比例变化不影响超晶格热导率.随着温度升高,热导率趋于定值,界面散射对于声子传输的作用减小,而U过程的作用增加.
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