利用简单的实验设备，特殊的金属丝作触媒，以SiO2和C为原料，利用碳热还原反应生成的SiO和CO，通过CVD（化学气相沉积）的方法快速合成α－SiC晶须用光学显微镜研究了晶须的生长速度，通过TEM研究α-SiC晶须的结构和生长方式讨论了这种方法中α-SiC晶须生长的热力学条件、机理及生长动力学模型
SiC whiskers of good quality were easily prepared at 1100℃ - 1300℃ byCVD (chemically-vapour-deposited) with carbonthermal reduction of SiO2 and using a special metal thread as catalyst. The rate of growth, crystalline characteristics and growth method of whiskers were studied by means of optical microscopy and transmissin electronmicroscopy. The thermodynamic conditions, growth mechanism and growth kinetics SiCw inthis method were also discussed.
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