采用磁控溅射的方法在Si(111)衬底上溅射沉积Ga2O3/Cr膜,并通过氨化的方法在Si(111)衬底上成功合成了六方纤锌矿GaN纳米结构材料,研究了不同的氨化温度对合成GaN纳米材料的影响.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HR-TEM)、傅里叶红外吸收(FTIR)光谱来检测样品的形态,结构和成分,并且讨论了GaN纳米结构的生长机理.研究结果表明,在Cr催化合成GaN纳米结构的过程中,氨化温度对其有重要影响,最佳温度是950℃.
参考文献
| [1] | Nakamura N;Senoh M;lwasa N et al.[J].Japanese Journal of Applied Physics,1995,34:L797-L799. |
| [2] | Bockowski M .[J].Physica B,1999,265:1-5. |
| [3] | Weiqiang Han;Philipp Redlich;Frank Ernst .Synthesis of GaN-carbon composite nanotubes and GaN nanorods by arc discharge in nitrogen atmosphere[J].Applied physics letters,2000(5):652-654. |
| [4] | Wei-Qiang Han;Alex Zettl .Pyrolysis approach to the synthesis of gallium nitride nanorods[J].Applied physics letters,2002(2):303-305. |
| [5] | Xu BS;Zhai LY;Liang J;Ma SF;Jia HS;Liu XG .Synthesis and characterization of high purity GaN nanowires[J].Journal of Crystal Growth,2006(1):34-39. |
| [6] | Li J Y;Chen X L;Qiao Z Y et al.[J].Journal of Crystal Growth,2000,213(3-4):408-410. |
| [7] | Han W;Fan S;Li Q et al.[J].Science,1997,277(5330):1287-1289. |
| [8] | Peng HY.;Wang N.;Zheng YF.;Liao LS.;Shi WS.;Lee CS.;Lee ST.;Zhou XT. .Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition[J].Chemical Physics Letters,2000(5-6):263-270. |
| [9] | Seo H W;Bae S Y;Park J et al.[J].Journal of Chemical Physics,2002,116(21):9492-9499. |
| [10] | Zhuang Huizhao;Gao Haiyong;Xue Chengshan et al.[J].Rare Metal Materlals and Engineering,2005,34:73-76. |
| [11] | Yang Yingge;Ma Honglei;Xue Chengshan et al.[J].Applied Surface Science,2002,193:254-260. |
| [12] | Boo JH.;Ho W.;Rohr C. .MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer[J].Journal of Crystal Growth,1998(0):439-444. |
| [13] | Ai Yujie;Xue Chengshan;Sun Chuanwei et al.[J].Materials Letters,2007,61:2833-2836. |
| [14] | Sun Y.;Sonoda N.;Miyasato T. .Outdiffusion of the excess carbon in SiC films into Si substrate during film growth[J].Journal of Applied Physics,1998(11):6451-6453. |
| [15] | Demichelis F;Crovini G;Pirri C F et al.[J].Thin Solid Films,1994,241(1-2):274-277. |
| [16] | Xiao Hongdi;Ma Honglei;Xue Chengshan et al.[J].Diamond and Related Materials,2005,14:1730-1734. |
| [17] | C. C. Tang;S. S. Fan;H. Y. Dang .Simple and high-yield method for synthesizing single-crystal GaN nanowires[J].Applied physics letters,2000(13):1961-1963. |
| [18] | Xue C S;Wu Y X;Zhuang H Z et al.[J].Physica E,2005,30:179-181. |
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