用磁控溅射工艺分别在Si和Al2O3衬底上沉积两种不同织构组分的多晶柱状Cu膜, 基于动力学标度方法表征两种薄膜的表面粗化特征. 结果表明, Cu(111)取向晶粒组分多的薄膜的生长指数较大、表面粗化速率较快. 对于较低温度下沉积的多晶柱状薄膜, 基于其晶粒几何形态和弱化的晶界限制的特点, 提出了一种表面粗化机制, 认为薄膜的表面粗化主要依赖于其晶粒表面的粗化过程, 而薄膜织构决定了薄膜表面粗化速率.
In this paper Cu thin films with different texture components were deposited on Si(111) and Al2O3 substrates by magnetron sputtering technology at room temperature. And the dynamic scaling method was developed to characterize surface roughening of the two films. The result shows that the growth exponent increases when the intensity of Cu (111) orientation increases. A surface roughening mechanism of polycrystalline columnar films growth was proposed to explain this phenomena，in which the influence of grain configuration and grain boundary can be negligible and the texture component is an important factor for surface roughening process.
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