采用置换活化法,以PdCl2/BOE/HNO3溶液对Ta/SiO2/Si基板进行活化,然后在基板上成功实现化学镀Cu薄膜.应用场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)等方法,研究了活化时间及超声波对化学镀Cu薄膜表面形貌和结构的影响.结果表明,在化学镀Cu过程中没有引入超声波时,随着活化时间由30 s增加到150 s,Cu膜覆盖率逐渐降低;在引入超声波以后,随着活化时间的增加,Cu膜覆盖率始终很高.XRD分析表明,引入超声波以后,Cu(111)和(200)峰的衍射强度明显增加,当活化时间为60 s时,Cu(111)和(200)峰的强度比I(111)/I(200)达到4.53.对具有沟槽的Ta/SiO2/Si基板进行化学镀Cu的结果表明,引入超声波,可以明显改善对沟槽的填充效果.
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