利用TCAD半导体器件仿真软件对N型插指背接触(Interdigitated Back Contact,IBC)单晶硅太阳电池发射区半宽度进行研究,全面系统地分析了在不同背表面复合速率的情况下,发射区半宽度对IBC太阳电池短路电流密度(JsC)、开路电压(VOC)、填充因子(FF)及转换效率(Eff)的影响.结果表明:随着背表面复合速率的增大,对于不同发射区半宽度的情况,IBC太阳电池JSC、VOC、FF及Eff均显著降低.当背表面复合速率一定时,发射区半宽度越大,JSC、VOC越高,而FF越低.随着发射区半宽度的增大,IBC太阳电池Eff呈现先增大后减小的变化特点.当背表面复合速率较小(50～500 cm/s)时,最优的发射区半宽度为800 μm.当背表面复合速率较高(≥5000 cm/s)时,最优的发射区半宽度为1200 μm.
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