采用等离子体增强化学气相沉积技术通过高氢和低氢稀释层交替生长制备出多层初始晶硅薄膜,利用Raman散射、红外吸收、紫外可见吸收及I-V测量等技术分析了薄膜的微观结构、能带特征和光电导特性.结果显示,不同氢稀释层交替生长导致薄膜由非晶硅向初始晶硅结构转变,随高氢稀释层厚度的增加,薄膜微观结构有序性提高,所对应薄膜光学带隙减小,而带尾分布展宽.I-V测量显示,薄膜微观结构有序性提高和光学带隙降低的共同作用导致薄膜光敏性呈现先减小后增加趋势,然而,在高氢稀释层厚度较大时,纳米晶硅边界载流子快速复合导致薄膜光敏性的显著减小.
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