射频PECVD法高压快速制备纳米晶硅薄膜

功能材料, 2008, 39(5): 848-850.

射频PECVD法高压快速制备纳米晶硅薄膜

陈城钊 ^1, , 邱胜桦 ^2, , 刘翠青 ^3, , 吴燕丹 ^4, , 李平 ^5, , 余楚迎 ^6, , 林璇英 ^7,

1.韩山师范学院,物理与电子工程系,广东,潮州,521041

2.韩山师范学院,物理与电子工程系,广东,潮州,521041

3.韩山师范学院,物理与电子工程系,广东,潮州,521041

4.韩山师范学院,物理与电子工程系,广东,潮州,521041

5.韩山师范学院,物理与电子工程系,广东,潮州,521041

6.汕头大学,物理系,广东,汕头,515063

7.韩山师范学院,物理与电子工程系,广东,潮州,521041;汕头大学,物理系,广东,汕头,515063

基金项目: 韩山师范学院青年科研基金(0503)

关键词：纳米晶硅薄膜 , RF-PECVD , 生长速率

Preparation of nanocrystalline silicon thin film at high pressure and fast rate by PECVD technique

采用传统的射频等离子体增强化学气相沉积技术,在较高的工作气压(133～266Pa)下,以0.4nm/s速率制备出优质的氢化纳米晶硅薄膜.薄膜的晶化率约60%,平均晶粒尺寸约6.0nm,暗电导率为10-3～104/Ω·cm.红外吸收谱显示,薄膜中没有Si-O、Si-C、Si-N等杂质键,随晶化率的提高,Si-H键也逐渐消失.

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射频PECVD法高压快速制备纳米晶硅薄膜

Preparation of nanocrystalline silicon thin film at high pressure and fast rate by PECVD technique

参考文献