研究了La2CuO4+δ试样在加热过程中氧的逸出及其对试样电导率的影响.结果表明La2CuO4+δ试样的电导率与其所逸出的氧分子数密切相关.未经电化学充氧、即间隙氧含量较低的试样,在673K和1073K附近有两个氧逸出过程,前者为间隙氧的逸出,其导致CuO2平面空穴截流子浓度的降低而使试样的电导率显著下降;后者系晶格中的氧逸出,使晶格中产生氧空位,但对试样电导率影响较小.经电化学充氧的间隙氧含量较高的试样,在533K和673K附近有两个脱氧过程,分别对应处于两种状态的间隙氧的逸出,两者均导致空穴载流子浓度的降低而使试样的电导率显著下降.
参考文献
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| [3] | Cordero F;Cantelli R .Interstitial O and O vacancies in La,CuO4+δ during high-temperature treatment Physica C[J].Interstitial O and O vacancies in LaCuO4+δ during high-temperature treatment Physica C,1999,312:21. |
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