入射角度对Ar+与SiC表面相互作用影响的分子动力学模拟

材料导报, 2011, 25(16): 136-139.

入射角度对Ar+与SiC表面相互作用影响的分子动力学模拟

孙伟中 ^1, , 张浚源 ^2, , 赵成利 ^3, , 陈峰 ^4, , 苟富均 ^5,

1.四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,成都610064

2.四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,成都610064

3.贵州大学等离子体与材料表面作用研究所,贵阳550025

4.贵州大学等离子体与材料表面作用研究所,贵阳550025

5.四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,成都610064;荷兰皇家科学院等离子体所,荷兰2300

基金项目: 国际热核聚变实验堆(ITER)计划专项(2009GB104006) 贵州省优秀青年科技人才培养计划(700968101)

关键词：分子动力学 , SiC , 溅射 , 角度分布

Molecular Dynamics Simulation of the Effects of Angle on Ar+ Interactions with SiC Surface

采用分子动力学模拟方法研究了入射角度对Ar+与SiC样品表面相互作用的影响.由模拟结果可知,入射角度对样品原子溅射影响很大.随着入射角度的增大,Si原子和C原子的溅射量先增加后减小.相同入射角度下,Si原子的溅射阈值比C原子的小,Si原子的溅射量大于C原子的溅射量.初始样品在Ar+以不同角度轰击2000次后的形貌各异.产物中主要以Si原子和C原子为主,有少量的Si类和C类产物.入射角度对产物Si原子的角度分布几乎没有影响,而对产物C原子的角度分布有较小的影响.

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