本文利用容性放电模式(E-mode)的电感耦合等离子体(ICP)化学气相沉积技术,在低温(100℃)下采用硅烷(SiH4)、氮气(N2)和氢气(H2)作为先驱反应气体制备氢化氮化硅薄膜(SiNx∶H),并通过傅里叶红外光谱(FTIR)、扫描电子显微镜(SEM)和X射线光电子能谱仪(XPS)对薄膜的键结构、键密度、氢含量以及化学组成进行表征.采用少子寿命测试仪(Sinton WCT-120)研究薄膜在n型晶硅表面的钝化效果.结果表明,氮硅原子比为0.4的SiN0.4∶H薄膜具有最高的氢含量,高达29％,而且其钝化效果最好.最高少子寿命达到251μs,表面复合速率降低至85 cm/s,Suns-Voc测到的提示开路电压达到652 mV.
参考文献
| [1] | Shaoqing Xiao;Shuyan Xu.High-Efficiency Silicon Solar Cells--Materials and Devices Physics[J].Critical Reviews in Solid State and Materials Sciences,20144(4):277-317. |
| [2] | 宋江婷 .氮化硅薄膜的制备工艺优化和光学性质的研究[D].华侨大学,2010. |
| [3] | Shubham Duttagupta;Fen Lin;Marshall Wilson.Extremely low surface recombination velocities on low-resistivity n-type and p-type crystalline silicon using dynamically deposited remote plasma silicon nitride films[J].Progress in photovoltaics,20146(6):641-647. |
| [4] | 马康;王海燕;吴芳;卢景霄;郜小勇;陈永生.PECVD低温制备微晶硅薄膜的研究[J].人工晶体学报,2008(1):97-101. |
| [5] | 周国华;施正荣;朱拓.氮化硅薄膜对硅片背表面的钝化作用[J].能源工程,2008(1):28-30. |
| [6] | 陶涛;苏辉;谢自力;张荣;刘斌;修向前;李毅;韩平;施毅;郑有炓.PECVD法氮化硅薄膜生长工艺的研究[J].微纳电子技术,2010(5):267-272,303. |
| [7] | Zambom LD.;Mansano RD.;Furlan R..Silicon nitride deposited by inductively coupled plasma using silane and nitrogen[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,20022(2):213-220. |
| [8] | Kim, S.;Kim, B..Deposition rate of SiN film grown by using a pulsed-PECVD at room-temperature[J].Current applied physics: the official journal of the Korean Physical Society,2010Suppl.3(Suppl.3):S372-S374. |
| [9] | 龚灿锋;杨德仁;王晓泉;席珍强;汪雷;阙端麟.氮化硅薄膜对晶体硅材料和电池的钝化效果研究[J].太阳能学报,2005(5):613-616. |
| [10] | 李伟东;吴学忠;李圣怡.PECVD氮化硅薄膜制备工艺研究[J].中国机械工程,2005(z1):396-398. |
| [11] | 吴晓松;褚学宁;李玉鹏.基于正交试验的PECVD法沉积氮化硅薄膜工艺参数优化研究[J].人工晶体学报,2014(8):1913-1920. |
| [12] | Molinari M.;Rinnert H.;Vergnat M..Correlation between structure and photoluminescence in amorphous hydrogenated silicon nitride alloys[J].Physica, E. Low-dimensional systems & nanostructures,20033/4(3/4):445-449. |
| [13] | M. Lipinski.Silicon nitride for photovoltaic application[J].Archives of Materials Science and Engineering,20102(2):69-87. |
| [14] | H. Maeckel;R. Ludemann.Detailed study of the composition of hydrogenated SiN_(x) layers for high-quality silicon surface passivation[J].Journal of Applied Physics,20025(5):2602-2609. |
| [15] | Thomas Lauinger;Jens Moschner;Armin G. Aberle;Rudolf Hezel.Optimization and characterization of remote plasma-enhanced chemical vapor deposition silicon nitride for the passivation of P-type crystalline silicon surfaces[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,19982(2):530-543. |
| [16] | Jonathon Mitchell;Daniel Macdonald;Andres Cuevas.Thermal activation energy for the passivation of the n-type crystalline silicon surface by hydrogenated amorphous silicon[J].Applied Physics Letters,200916(16):162102-1-162102-3-0. |
| [17] | Aberle AG..Overview on SiN surface passivation of crystalline silicon solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20011/4(1/4):239-248. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%