钨含量对磁控溅射铜钨合金薄膜结构和性能的影响

机械工程材料, 2011, 35(4): 20-24.

钨含量对磁控溅射铜钨合金薄膜结构和性能的影响

郭中正 ^1, , 孙勇 ^2, , 周铖 ^3, , 段永华 ^4, , 彭明军 ^5,

1.昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

2.昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

3.昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

4.昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

5.昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

基金项目: 云南省自然科学基金重点资助项目(2004E0004Z) 云南省教育厅科学研究基金资助项目(09Y0091) 国家自然科学基金资助项目(50871049)

关键词：铜钨合金 , 薄膜 , 固溶度 , 电阻率 , 显微硬度

Influence of W Content on Structure and Properties of Cu-W Alloy Thin Films Deposited by Magnetron Sputtering

用磁控溅射法制备铜钨合金薄膜,采用能谱仪、X射线衍射仪、透射和扫描电镜、电阻计和显微硬度仪等对合金薄膜的成分、结构和性能进行了表征,探讨了钨原子分数的影响.结果表明:含原子分数31.8%～54.8%钨的铜钨膜呈非晶态,表面较平整;含18%和60%钨的膜为晶态,且出现固溶度扩展,分别存在fcc Cu(W)亚稳过饱和固溶体和bcc W(Cu)固溶体,铜钨膜电阻率高于纯铜膜的,非晶铜钨膜电阻率较晶态膜高1.9倍以上;铜钨膜硬度与钨含量呈正相关,非晶及晶态铜钨膜硬度分别低于和略高于Voigt公式的计算值.

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