采用溶剂熔区移动法生长出掺In的Cd0.9Zn0.1Te晶体.测试了晶体轴向Zn含量分布,并对晶体的头部和中部进行了Te夹杂相、红外透过率、I-V特性曲线和PL谱图的对比测试.结果表明:头部晶体的Zn含量、红外透过率和电阻率均大于中部;而头部晶体的Te夹杂尺寸、杂质和缺陷含量均小于中部.
参考文献
| [1] | Y.V. Bezsmolnyy.Comparative analysis of radiation-sensitive properties of detectors based on CdTe and Cd_(1-X)Zn_(x)Te_(1-Y)Se_(y) single crystals grown by the vertical Bridgman technique[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,20011/2(1/2):461-463. |
| [2] | Hatanaka Y.;Aoki Y.;Aoki T.;Nakanishi Y.;Niraula M..Surface processing of CdTe compound semiconductor by excimer laser doping[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,19991(1):227-232. |
| [3] | S. Sitharaman;R. Raman;L. Durai;Surendra Pal;Madhukar Gautam;Anjana Nagpal;Shiv Kumar;S.N. Chatterjee;S.C. Gupta.Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers[J].Journal of Crystal Growth,20053(3):318-326. |
| [4] | Fritz SG;Shikhaliev PM;Matthews KL 2nd.Improved x-ray spectroscopy with room temperature CZT detectors.[J].Physics in medicine and biology,201117(17):5735-5751. |
| [5] | Nan Zhang;Andrew Yeckel;Arnold Burger;Yunlong Cui;Kelvin G. Lynn;Jeffrey J. Derby.Anomalous segregation during electrodynamic gradient freeze growth of cadmium zinc telluride[J].Journal of Crystal Growth,20111(1):10-19. |
| [6] | Wang LJ.;Shi WM.;Qian YB.;Min JH.;Liu DH.;Xia YB.;Sang WB..Electrical properties of contacts on P-type Cd0.8Zn0.2Te crystal surfaces[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,20003(3):581-585. |
| [7] | Gamal GA;Abou Zied M;Ebnalwaled AA.Transport properties of Cd0.8Zn0.2Te crystals[J].Physica, B. Condensed Matter,20071/2(1/2):285-291. |
| [8] | 时彬彬;闵嘉华;梁小燕;张继军;王林军;邢晓兵;段磊;孟华;杨升.溶剂熔区移动法制备Cd0.9Zn0.1Te晶体及性能研究[J].人工晶体学报,2015(4):857-862. |
| [9] | Zhang XM;Zhao ZL;Zhang P;Ji RB;Li QB.Comparison of CdZnTe crystals grown by the Bridgman method under Te-rich and Te-stoichiometric conditions and the annealing effects[J].Journal of Crystal Growth,20092(2):286-291. |
| [10] | 王文彦 .玻璃衬底上低温沉积GaN薄膜及其特性分析[D].大连理工大学,2008. |
| [11] | Pengfei Yu;Wanqi Jie.Photoluminescence analysis of high-resistivity CdZnTe:In single crystals obtained by annealing[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2014:382-386. |
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