在常压条件下采用气相沉积方法制备出SnO_2纳米线,X射线衍射和Raman光谱结果均表明制备出来的产物为金红石结构.在样品的光致发光谱中观察到缺陷发光峰.研究还发现蒸发源及其放置时间在SnO_2纳米线的形成过程中起重要的作用.
SnO_2 nanowires were successfully synthesized via thermal evaporation method at atmospheric pressure. Both XRD and Raman results reveal that the products are the rutile structure of SnO_2. Room temperature PL spectrum shows that there are four emission peaks related with defects. We also found that the matierial source and its loading time are very crucial for the formation of the SnO_2 nanowires.
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