Si1 y GexCy ternary alloy films were grown on monocrystalline silicon substratesby C+ ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of thealloy films were determined using Fourier transform infrared spectroscopy and vander Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-y GexCy layers, a certain amount of C atomsoccupied substitutional sites and no SiC was formed.
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