退火条件对Sn量子点生长和红外光学性质的影响

材料导报, 2010, 24(14): 19-36.

退火条件对Sn量子点生长和红外光学性质的影响

赵希磊 ^1, , 梁勇 ^2, , 张忠锁 ^3, , 黄高鹏 ^4, , 王科范 ^5,

1.河南大学微系统物理研究所和光伏材料省重点实验室,开封,475004

2.河南大学微系统物理研究所和光伏材料省重点实验室,开封,475004

3.河南大学微系统物理研究所和光伏材料省重点实验室,开封,475004

4.河南大学微系统物理研究所和光伏材料省重点实验室,开封,475004

5.河南大学微系统物理研究所和光伏材料省重点实验室,开封,475004

基金项目: 河南大学省部共建项目(SBGJ090514) 教育部"博士生创新计划"同步辐射研究生创新基金(20090655S)

关键词： Sn量子点 , 固相外延 , 同步辐射红外光谱

Effect of Annealing Conditions on the Morphology and Optical Properties of Sn Quantum Dots

首次采用固相外延生长技术在Si(001)表面直接生长Sn量子点,并应用原子力显微镜(AFM)、X射线衍射(XRD)和同步辐射傅里叶红外光谱(FTIR)研究了退火条件对量子点样品的表面形貌、结晶性和红外光学性质的影响.AFM结果表明,随着退火温度的升高和退火时间的延长,量子点的平均尺寸变大,面密度减小.XRD结果显示,外延得到的Sn量子点为四方结构的β-Sn,与衬底的相对取向为Sn(110)//Si(001).由于β-Sn量子点的尺寸仍较大,同步辐射FTIR谱中没有观察到量子点的特征吸收峰.

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