氮化镓粉末的合成及其结构性质的研究

功能材料, 2004, 35(z1): 221-223.

氮化镓粉末的合成及其结构性质的研究

肖洪地 ^1, , 马洪磊 ^2, , 薛成山 ^3, , 马瑾 ^4, , 宗福建 ^5, , 张希键 ^6, , 计峰 ^7, , 胡文容 ^8,

1.山东大学,物理与微电子学院,山东,济南,250100

2.山东大学,物理与微电子学院,山东,济南,250100

3.山东师范大学,半导体研究所,山东,济南,250014

4.山东大学,物理与微电子学院,山东,济南,250100

5.山东大学,物理与微电子学院,山东,济南,250100

6.山东大学,物理与微电子学院,山东,济南,250100

7.山东大学,物理与微电子学院,山东,济南,250100

8.山东大学,物理与微电子学院,山东,济南,250100

基金项目: 国家自然科学基金(90301002,90201025)

关键词： Ga2O3粉末 , GaN粉末 , 氮化温度

Study of Synthesis of GaN powders and its structural properties

在950℃氮化温度下,通过β-Ga2O3粉末与流动的NH3反应35min制备出GaN粉末.XRD、XPS、FTIR、TEM的测量结果表明:GaN粉末是六角纤锌矿结构的单晶晶粒,其晶格常数a=0.3191nm,c=0.5192nm;在粉末表面,Ga和N两种元素比约为1:1;GaN晶粒的形状为棒状.

参考文献

[1]	Nakamura S;Tietian J .[J].Applied Physics Letters,1994,74:1687.
[2]	Yang Q K;Li A Z;Zhang YG et al.[J].Journal of Crystal Growth,1998,28
[3]	Brandt O.;Yang H.;Klann R.;Mullhauser JR.;Ploog KH.;Wunsche HJ. .Recombination dynamics in GaN[J].Journal of Crystal Growth,1998(0):790-793.
[4]	Nakamura S;Senoh M;Nagahama S .[J].Journal of Applied Physics,1996,35:74.
[5]	Sakai S;Kurai S;Abe T;Noi y .[J].Japanese Journal of Applied Physics,1996,35:L77.
[6]	Porowski S. .HIGH PRESSURE GROWTH OF GAN - NEW PROSPECTS FOR BLUE LASERS[J].Journal of Crystal Growth,1996(1/4):583-589.
[7]	Jhonson W C;Parsons J P;Krew M C .[J].Journal of Physical Chemistry,1932,36:2651.
[8]	Isherwood B J;Wickenden D K .[J].Journal of Materials Science,1970,5:869.
[9]	Lorenz M R;Binkowski B .[J].Journal of the Electrochemical Society,1962,109:24.
[10]	Shi WS.;Wang N.;Lee CS.;Lee ST.;Zheng YF. .Microstructures of gallium nitride nanowires synthesized by oxide-assisted method[J].Chemical Physics Letters,2001(5-6):377-380.
[11]	Zhang L D;Meng G W;Phillipp F .[J].Materials Science and Engineering,2000,A286:34.
[12]	Jung Woo-Sik .[J].Materials Letters,2002,57:110.
[13]	Cho Sungyong;Lee Jongwon;In Yong Park;Seontai Kim .[J].Materials Science and Engineering,2002,B95:275.
[14]	Lee Heon;James S .Harris Jr[J].Journal of Crystal Growth,1996,169:689.
[15]	Balkas C M;Basceri C;Davis R F .[J].Powder Diffraction,1995,10:266.
[16]	Bungaro C;Rapecewicz K;Bernhole J .[J].Physical Review,2000,B61:6720.
[17]	Yang YG.;Ma HL.;Xue CS.;Zhuang HZ.;Hao XT.;Ma J.;Teng SY. .Preparation and structural properties for GaN films grown on Si (111) by annealing[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(1/4):254-260.
[18]	Pal S.;Sugino T. .Fabrication and characterization of metal/GaN contacts[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/2):263-267.
[19]	Liu Shihong.X-ray photo-electron spectroscopy analysis:[M].Science publishing company,1988:93.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

氮化镓粉末的合成及其结构性质的研究

Study of Synthesis of GaN powders and its structural properties

参考文献