采用等离子体增强化学气相沉积(PECVD)法分别在玻璃衬底和p型薄膜硅衬底上制备了微晶硅薄膜.使用拉曼谱仪、紫外-可见分光光度计、傅里叶红外光谱仪等对微晶硅薄膜进行检测,重点研究了硅烷浓度、衬底温度对薄膜沉积速率和晶化率的影响.实验结果表明:两种衬底上薄膜的沉积速率均随硅烷浓度的增大、衬底温度的升高而变大.硅烷浓度对两种衬底的薄膜晶化率影响规律相同,即均随其升高而降低；但两种衬底的衬底温度影响规律存在差别:对玻璃衬底而言,温度升高,样品晶化率减小；而p型薄膜硅衬底则在温度升高时,样品晶化率先增大后减小.此外还发现,晶化率与薄膜光学性能及含氧量存在较密切关联.
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