本论文研究的全方位生长装置能解决常规的ADP晶体的单向生长问题.在这套装置中,籽晶完全位于溶液中央,籽晶可以首先恢复其理想的结晶学外形.在晶体生长过程中,晶体在各个方向的生长均为自由生长,且育晶器中央的溶液稳定性也明显高于育晶器顶部和底部.这些因素都有利于ADP晶体的优质快速生长.实验所得晶体的质量通过透过率、晶体内缺陷位错密度、高分辨率X射线衍射表征,并将所得结果与常规方法进行了比较.
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