在弱还原气氛下采用高温固相法制备Ba0.955Al2-xGaxSi2O8:Eu2+(x=0～1.0)系列荧光粉,研究Ga3+置换Al3+对晶体结构和光谱特性的影响.Ga3+与Al3+以类质同相替代进入BaAl2Si2O8晶格形成连续固溶体,晶胞参数a,b,c,β和晶胞体积V均随Ga3+置换量呈线性增加.宽带激发光谱,覆盖范围为230～400 nm,可拟合成4个峰,表观峰值位于330 nm,基本不随Ga3+置换量变化;随着Ga3+置换量的增加,半高宽从93 nm减小至83 nm.发射光谱位于375～560 nm,可由422和456 nm两峰拟合而成,表观峰值位于434 nm,两拟合峰峰位均随Ga3+置换量呈线性红移,且拟合峰强度比呈线性递减.
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