SiC单晶片是第三代宽禁带半导体材料,其特有的晶体结构及高的材料硬度使其加工过程成为难点,突出表现为加工效率低、表面质量不稳定等问题,因此SiC单晶片的高效低损伤加工技术成为研究的焦点.介绍了SiC单晶材料去除机理,总结了高效精密加工SiC单晶的工艺现状及发展趋势,这对于提高SiC单晶片加工技术和应用水平有重要的理论意义和实用价值.
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