简述了ZnSe体单晶熔体生长、气相生长、溶液生长和固相再结晶技术以及ZnSe的基本理化性质,分析并认为这些基本理化性质对ZnSe单晶生长过程控制存在不同程度的影响,理解这些性质并将其应用于ZnSe晶体生长过程工艺参数的控制,对获得高质量大尺寸ZnSe单晶十分重要.分析了不同方法的工艺与相应ZnSe单晶研究现状及发展趋势.
参考文献
[1] | Luo H.;Furdyna JK. .THE II-VI SEMICONDUCTOR BLUE-GREEN LASER - CHALLENGES AND SOLUTIONS [Review][J].Semiconductor Science and Technology,1995(8):1041-1048. |
[2] | Endoh Y;Tagnchi T .[J].Materials Research Society Symposium Proceedings,1990,161:211. |
[3] | Whenrett B S .[J].Journal of Crystal Growth,1996,159:766. |
[4] | Miller D A B .[J].Optical and Quantum Electronics,1990,22:561. |
[5] | 苏小平;余怀之;褚乃林 .[J].稀有金属,1997,21(06):469. |
[6] | Bally F .[J].Journal of Physics,1966,27:33. |
[7] | Brebrick R F;Liu Haochieh .[J].Journal of Phase Equilibria,1996,17(06):495. |
[8] | Kikuma I;Furukosh M .[J].Journal of Crystal Growth,1985,71:136. |
[9] | Fitzpatrick B J .[J].Journal of Crystal Growth,1988,86:106. |
[10] | Cemik L.[M].High Temp-High Pressure,1974:203. |
[11] | Su Ching hua;Palosz W;Feth S et al.[J].Journal of Crystal Growth,1998,192:386. |
[12] | Nelson J .[J].Journal of Crystal Growth,1993,132:538. |
[13] | Graza K;Janik E;Mycielski A et al.[J].Journal of Crystal Growth,1995,146:75. |
[14] | Okada H;Kawanaka T .[J].Journal of Crystal Grwoth,1997,172:361. |
[15] | Addamiano A;Aven M .[J].Journal of Applied Physics,1960,31:36. |
[16] | Kulakov M P;Savtchenko I R;Fadeev A V .[J].Journal of Crystal Growth,1981,52:609. |
[17] | Yoshida H;Fajii T .[J].Journal of Crystal Growth,1992,117:75. |
[18] | 介万奇.新型Ⅱ-Ⅵ族材料的晶体生长与缺陷控制[J].中国科学基金,2000(02):92-96. |
[19] | LIU Juncheng;Jie Wanqi .[J].Journal of Crystal Growth,1998,183:140. |
[20] | Kukimoto H .[J].Journal of Crystal Growth,1968,29(06):936. |
[21] | Eissler E.E.;Lynn K.G. .Properties of melt-grown ZnSe solid-state radiation detectors[J].IEEE Transactions on Nuclear Science,1995(4):663-667. |
[22] | Debska U;Giriat W .[J].Journal of Crystal Growth,1984,70:339. |
[23] | Houban A;Dalecki W;Nowys K.[J].Journal of Crystal Growth,1999:282. |
[24] | Kikuma I .[J].Journal of Crystal Growth,1983,63:410. |
[25] | Kikuma I .[J].Japanese Journal of Applied Physics,1985,24:941. |
[26] | Kikuma I.;Shiohara T. .SEEDED MELT GROWTH OF ZNSE CRYSTALS UNDER ZN PARTIAL PRESSURE[J].Journal of Crystal Growth,1996(1/4):60-63. |
[27] | Wang JF.;Isshiki M.;Omino A. .Growth and conductive type control of ZnSe single crystals by vertical Bridgman method[J].Journal of Crystal Growth,2001(1):69-73. |
[28] | Shore M;Greehserg B .[J].Journal of Crystal Growth,1988,56:132. |
[29] | Bhargara R .[J].Journal of Crystal Growth,1982,59:15. |
[30] | 王季陶;刘明登.半导体材料[M].北京:高等教育出版社,1990 |
[31] | Koyana T;Yodo T .[J].Journal of Crystal Growth,1989,94:11. |
[32] | Su Chinghua .[J].Journal of Crystal Growth,1998,192:386. |
[33] | Su Chinghua .[J].Journal of Crystal Growth,2000,208:237. |
[34] | Su Chinghua;Feth S .[J].Journal of Crystal Growth,2001,224:32. |
[35] | 王吉丰;黄锡珉 .[J].人工晶体学报,1990,19(03):212. |
[36] | Cutter J R;Woods J .[J].Journal of Crystal Growth,1978,47:405. |
[37] | Mnxanoi T;Shiohara T;Sotokawa A et al.[J].Journal of Crystal Growth,1995,146:49. |
[38] | Su Chinghua;George M A;Palosz W et al.[J].Journal of Crystal Growth,2000,213:267. |
[39] | Mochizuki K .[J].Journal of Crystal Growth,1994,135:318. |
[40] | Korosteliu Y V;Kozlovsky V I;Nasibor A S et al.[J].Journal of Crystal Growth,1996,116:51. |
[41] | Yakimorich V N;Lerchdenke V I;Yablonski G P.[J].Journal of Crystal Growth,1999:975. |
[42] | Korostelin Y U;kozlovsky V I;Nasibo A S et al.[J].Journal of Crystal Growth,1996,159:181. |
[43] | Su Chinghua;Sha Yigao;Volz M P et al.[J].Journal of Crystal Growth,2000,216:104. |
[44] | Bottener K .[J].Journal of Crystal Growth,1995,146:53. |
[45] | Matsumot K .[J].Journal of Crystal Growth,1986,79:723. |
[46] | Minila J;Triboulet R .[J].Materials Letters,1995,24(04):221. |
[47] | Fajiwara S;Kotani T .[J].Journal of Crystal Growth,1999,205:43. |
[48] | Gerard P .[J].Materials Science and Engineering B,1992,144:369. |
[49] | Klosce K;Vllersma P .[J].Journal of Crystal Growth,1973,18:167. |
[50] | Koyama T;Yoda T .[J].Journal of Crystal Growth,1988,91:639. |
[51] | Fujiwara S.;Irikura M.;Matsumoto K.;Kotani T.;Nakamura T.;Namikawa Y. .Growth of dislocation-free ZnSe single crystal by CVT method[J].Journal of Crystal Growth,2000(4):353-360. |
[52] | Park TY.;Oh SK.;Park KH.;Song HJ.;Kim WT.;Choe SH.;Kim CD. Yoon CS.;Lim JY. .Optical properties of ZnAl2Se4, ZnAl2Se4 : Co2+, and ZnAl2Se4 : Er3+ single crystals[J].Journal of Applied Physics,1998(3):1567-1571. |
[53] | Park SA.;Kim WT.;Kim HG.;Jin MS.;Kim CD.;Yoon CS.;Song HJ. .Photoluminescence properties of MgxZn1-xSe single crystals[J].Journal of Applied Physics,1998(6):3429-3431. |
[54] | Triboulet R;Rabago F et al.[J].Journal of Crystal Growth,1982,59:172. |
[55] | Tanaka A.;Sukegawa T. .ZnSe growth from zinc chloride solvent by successive liquid phase epitaxy[J].Journal of Crystal Growth,2001(1):87-91. |
[56] | Dohnke I.;Neumann W.;Mulhberg M. .ZnSe single-crystal growth with SnSe as solvent[J].Journal of Crystal Growth,1999(Pt.1):287-291. |
[57] | Mcrarama K;Suto K .[J].Journal of Crystal Growth,2000,216:113. |
[58] | Urbiata A;Fernaade P;Piqueras J .[J].Materials Science and Engineering B,2000,78:105. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%