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随着热电材料制备技术和性能研究的发展,热电纳米材料越来越受到人们的关注.介绍了几种有应用潜能的热电纳米材料的研究进展,指出了有关热电纳米材料研究存在的主要问题和其可能的发展方向.

参考文献

[1] Sales B C;Mandrus D et al.[J].Science,1996,272:1325.
[2] Sales B C;Chakoumakos B C et al.[J].Journal of Solid State Chemistry,1999,146:528.
[3] Latturner S et al.[J].Journal of Solid State Chemistry,2000,151:61.
[4] Hicks L D;Dresselhaus M S .[J].Physical Review B,1993,47:12727.
[5] Lin Y M;Sun X Z et al.[J].Physical Review B,2000,62:4610.
[6] Gao YH.;Niu HL.;Zeng C.;Chen QW. .Preparation and characterization, of single-crystalline bismuth nanowires by a low-temperature solvothermal process[J].Chemical Physics Letters,2003(1/2):141-144.
[7] Zhang Z;Ying J Y et al.[J].Journal of Materials Research,1998,13:1745.
[8] Heremans J P;Thrush C M et al.[J].Physical Review Letters,2002,88:216801-216801.
[9] Lin Y M;Rabin O et al.[J].Applied Physics Letters,2002,81:2403.
[10] Sapp SA.;Martin CR.;Lakshmi BB. .Template synthesis of bismuth telluride nanowires[J].Advanced Materials,1999(5):402-404.
[11] Zhao X B et al.[J].Journal of Alloys and Compounds,2004,368:349.
[12] Takahashi M et al.[J].Journal of Applied Physics,2004,96:5582.
[13] Heinrich A.;Behr G.;Ivanenko K.;Schumann J.;Vinzelberg H.;Griessmann H. .Thermoelectric properties of beta-FeSi2 single crystals and polycrystalline beta-FeSi2+x thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(2):287-295.
[14] Beensh-Marchwicka G M;Mielcarek W;Prociow E .[J].Sensors and Actuators B-Chemical,2001,76:361.
[15] Sankapal BR.;Lokhande CD.;Mane RS. .Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method[J].Materials Chemistry and Physics,2000(3):230-234.
[16] Sankapal BR.;Lokhande CD. .Photoelectrochemical characterization of Bi2Se3 thin films deposited by SILAR technique[J].Materials Chemistry and Physics,2002(2/3):151-155.
[17] Lokhande CD.;Sartale SD.;Pathan HM.;Giersig M.;Ganesan V.;Sankapal BR. .A novel method for the deposition of nanocrystalline Bi2Se3, Sb2Se3 and Bi2Se3-Sb2Se3 thin films - SILAR[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(3/4):413-417.
[18] Sankapal BR.;Lokhande CD. .Studies on photoelectrochemical (PEC) cell formed with SILAR deposited Bi2Se3-Sb2Se3 multilayer thin films[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1):43-52.
[19] Sankapal BR.;Lokhande CD. .Effect of annealing on chemically deposited Bi2Se3-Sb2Se3 composite thin films[J].Materials Chemistry and Physics,2002(2):126-133.
[20] Kim I H .[J].Materials Letters,2000,44:75.
[21] Zou H;Rowe D M;Gao M .[J].Journal of Crystal Growth,2001,222:82.
[22] Venkatasubramania R;Siilvola E;Colpitts T .[J].NATURE,2001,413:597.
[23] Liu J L;Wang K L et al.[J].Thin Solid Films,2000,369:121.
[24] Harman T C;Taylor T J et al.[J].Science,2002,297:2229.
[25] Chung D Y;Hogan T et al.[J].Science,2000,287:1024.
[26] Larson P;Mahanti S D;Chung D Y et al.[J].Physical Review B,2002,65:045205-045201.
[27] Heremans J P;Thrush C M et al.[J].Physical Review B,2004,70:115334-115331.
[28] Hsu K F;Loo S;Guo F et al.[J].Science,2004,303:818.
[29] Bilc D;Mahanti S D;Quarez E et al.[J].Physical Review Letters,2004,93:146403.
[30] Lin H;Bozin E S et al.[J].Physical Review B,2005,2:174113.
[31] Quarez, E;Hsu, KF;Pcionek, R;Frangis, N;Polychroniadis, EK;Kanatzidis, MG .Nanostructuring, compositional fluctuations, and atomic ordering in the thermoelectric materials AgPbmSbTe2+m. The myth of solid solutions[J].Journal of the American Chemical Society,2005(25):9177-9190.
[32] Chen N;Gascoin F et al.[J].Applied Physics Letters,2005,87:171903.
[33] Cai K F;He X R .[J].Materials Letters,2005,60:2461.
[34] Nolas GS.;Caillat T.;Meisner GP.;Slack GA. .RAMAN SCATTERING STUDY OF ANTIMONY-BASED SKUTTERUDITES[J].Journal of Applied Physics,1996(5):2622-2626.
[35] Cai K F;Lei Q;Zhang L C.[A].Adelaide,Australia,2004
[36] Nolas G S;Weakley T J R et al.[J].Physical Review B,2000,61:3845.
[37] Cohn JL.;Fessatidis V.;Metcalf TH.;Slack GA.;Nolas GS. .Glasslike heat conduction in high-mobility crystalline semiconductors[J].Physical review letters,1999(4):779-782.
[38] Cai K F;Zhang L C;Lei Q.[J].Key Engineering Materials
[39] Cai K F;Zhang L C;Lei Q.[J].Crystal Growth and Design
[40] Meng JF.;Badding JV.;Nolas GS.;Shekar NVC. .Threefold enhancement of the thermoelectric figure of merit for pressure tuned Sr8Ga16Ge30[J].Journal of Applied Physics,2001(3):1730-1733.
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