藉由分析觸媒及奈米綫之結構與組成,詳細探討合成氧化矽奈米綫的固-液-固成長機制.與一般化學汽相沉積法不同的是,矽的來源直接由矽基板提供固態矽源.首先在矽基板上濺鍍上一層很薄(～5nm)的白金觸媒層.在升温過程中,白金薄膜會分裂形成直徑爲數百奈米大小的觸媒球.掃描式電子顯微鏡及穿透式電子顯微鏡的分析結果顯示,這些觸媒球的組成爲Pt3Si,并可作爲奈米綫成長的孕核點.在高達1100℃C的制程温度及5h的持温之下,矽基板氧化成爲氧化矽并藉由擴散溶解到觸媒球中,直到館和點而后析出成爲氧化矽的奈米綫.這些奈米綫爲非晶結構,直徑爲40～60nm,長度爲數百微米.
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