材料期刊网

We demonstrate that the Sm photoluminescence processes (including photoexcitation, transfer, and recombination) for Sm-doped porous Si and Sm-doped SiO2 are different: In the case of Sm-doped porous Si, there is a process by which electron-hole pairs are excited in Si nanoparticles and then transfer to Sm-related luminescence centers to recombine, in addition to the normal process of Sm-doped SiO2. The ratio of contribution to Sm luminescence of such a process to a normal one decreases with increasing the oxidation temperature. However, it has a complicated relationship with the photoexcitation wavelength. We suggest a method which makes it possible to calculate its value.