Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

材料热处理学报, 2004, 25(5): 818-820.

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1.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China

2.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China

3.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China

4.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China

5.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China

6.State Key Lab. for Materials Modification by Laser, Ion and Electron Beams Department of Physics, Dalian University of Technology, Dalian 116024, P. R. China

基金项目: 国家自然科学基金(50135040 &90206022)

Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

Keywords： Carbon nitride

Amorphous carbon nitride thin films were prepared by plasma-enhanced DC magnetron sputtering using twinned microwave electron cyclotron resonance plasma sources. Chemical structure of deposited films was investigated using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The results indicate that the deposition rate is strongly affected by direct current bias, and the films are mainly composed of a single amorphous carbon nitride phase with N/C ratio close to C3N4, and the bonding is predominantly of C-N type.

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Chemical Structure of Carbon Nitride Films Prepared by MW-ECR Plasma Enhanced Magnetron Sputtering

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