The propertiesof As+ implantedsilicon with anenergy160kev, differentdosesand anneal ing temperatures (500 700℃) were studied by means of x ray double crystaldiffraction( DCD) and ellipometricspectra ( ES) . Therockingcurvesof DCDweresimulated by multi layer modelof Dynamicaltheory,toobtainstrain distributionsasafunctionof depths. The1×1016 cm 2 annealed at600℃wasfoundthataepitaxiallayer wasformed . The ESresult provedtheseconclusions.
参考文献
| [1] |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%