采用脉冲激光沉积技术(PLD)在氧气气氛中以高纯Zn为(99.999%)靶材,在单晶硅和石英衬底表面成功生长了ZnO薄膜.通过X射线衍射仪、表明轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了ZnO薄膜的沉积时间对其性能的影响.结果表明,采用PLD法在室温下可以制备出(002)结晶取向和透过率高于75%的ZnO薄膜,但室温下沉积的ZnO薄膜的发射性能较差,沉积时间的延长不能改善薄膜的发光性能.
ZnO films yielded on single crystal silicon and quartz wafers are prepared by pulsed laser deposition method (PLD) using high pure Zn as a target. The crystal structures of ZnO films have been studied by X-ray diffraction, the thicknesses of ZnO films have been studied by surface profile and the optical properties of ZnO films have been studied by photoluminescence spectra and ultraviolet-visible spectrophotometry. The effects of different deposition times on crystal structures, thicknesses and optical properties of ZnO films are discussed. The results show that the crystal structures of ZnO films we prepared is (002) high structural perfection and the transmittance of the samples is more than 75%. But near band emission in various transitions of the samples is poor and it couldn't be improved with prolonging deposition time at room temperature by pulsed laser deposition method.
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