LED作为新一代光源,具有环保节能等突出优点。然而其出光效率一直是制约LED光源普及应用于照明领域的重要因素之一,LED的出光效率受到封装材料、封装结构、荧光粉激发效率、透明电极透光率和衬底反射率等因素的影响。本文对近年来应用于LED的光学薄膜,主要包括透明导电薄膜和全方位反射薄膜的研究进行了综述,分析了LED结构中采用光学薄膜,可以有效减少透明电极层透光率低和衬底反射率低的问题,提高LED出光效率。同时对LED光学薄膜和纳米技术的综合应用及发展趋势进行了展望。
LED has many advantages such as energy saving and environmental protection as a new generation of light.However,low light-extraction efficiency limits its popular applications in the illuminating field.Light-extraction efficiency is influenced by many factors including packaging materials,packaging structure,luminous efficiency of the phosphor,the transmittance of transparent conductor film and the reflectance of substrate.Development of optical thin-films in LED area was reviewed,moreover,the developing tendency of combinating optical thin-films with nano technology in the LEDs were prospected.Optical thin-films can be used in the LED structure to improve the light-extraction efficiency,such as using high anti-reflective films as the transparent conductor diffusion layer,using high reflective films as the reflector under the substrate,which can effectively reduce the influence due to the low light transmittance of transparent conductor and low reflectance of substrate.
参考文献
| [1] | 崔元日,潘苏予.第四代照明光源--白光LED[J].灯与照明,2004(02):31-34. |
| [2] | Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag[J].Applied Physics Letters,2003(2):311-313. |
| [3] | Kim JK;Chhajed S;Schubert MF;Schubert EF;Fischer AJ;Crawford MH;Cho J;Kim H;Sone C .Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact[J].Advanced Materials,2008(4):801-804. |
| [4] | 李丽,刘素芳,江莎,刘子贻.AZO薄膜的光学性质研究[J].重庆邮电大学学报(自然科学版),2009(06):781-784. |
| [5] | 陈杰,王军.铝掺杂氧化锌薄膜的光学性能研究[J].功能材料,2010(04):694-696. |
| [6] | Chun-Ju Tun;Jinn-Kong Sheu;Bao-Jen Pong;Min-Lum Lee;Ming-Yu Lee;Cheng-Kang Hsieh;Ching-Chung Hu;Gou-Chung Chi .Enhanced Light Output of GaN-Based Power LEDs With Transparent Al-Doped ZnO Current Spreading Layer[J].IEEE Photonics Technology Letters,2006(1):274-276. |
| [7] | 何小虎,韦莉.铟锡氧化物及其应用[J].稀有金属与硬质合金,2003(04):51-55,57. |
| [8] | 曾胜男,刘家祥,张楠.ITO薄膜的微观组织结构与光电性能研究[J].稀有金属材料与工程,2007(10):1861-1864. |
| [9] | Yao Y;Jin C;Dong Z;Sun Z;Huang SM .Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts[J].Displays: Technology and Applications,2007(3):129-132. |
| [10] | 齐龙茵,张德贤,何俊峰,崔光龙,赵飞,刘召军,李胜林.电子束低温蒸发ITO膜增透、增反特性研究[J].真空,2006(06):8-10. |
| [11] | 张庆丰,谷锦华,郭学军,王之健,卢景霄.电子束蒸发技术制备ITO薄膜的光电特性和微结构研究[J].真空,2008(03):55-58. |
| [12] | 张剑铭,邹德恕,刘思南,徐晨,沈光地.新型全方位反射铝镓铟磷薄膜发光二极管[J].物理学报,2007(05):2905-2909. |
| [13] | Y.P. Hsu;S.J. Chang;Y.K. Su;C.S. Chang;S.C. Shei;Y.C. Lin;c.H. Kuo;L.W. Wu;S.C. Chen .InGaN/GaN Light-Emitting Diodes with a Reflector at the Backside of Sapphire Substrates[J].Journal of Electronic Materials,2003(5):403-406. |
| [14] | 高伟,邹德恕,郭伟玲,宋欣原,孙浩,沈光地.AlGaInP发光二极管的全方位反射镜研究[J].固体电子学研究与进展,2008(04):537-539. |
| [15] | T. Gessmann;E. F. Schubert;J. W. Graff;K. Streubel;C. Karnutsch .Omnidirectional Reflective Contacts for Light-Emitting Diodes[J].IEEE Electron Device Letters,2003(11):683-685. |
| [16] | 殷明志,姚熹,吴小清,汪敏强,张良莹.溶胶-凝胶法制备纳米二氧化硅溶胶和多孔二氧化硅薄膜[J].硅酸盐学报,2002(06):766-770. |
| [17] | Ya-Ju Lee;Hao-Chung Kuo;Tien-Chang Lu;Shing-Chung Wang .High Light-Extraction GaN-Based Vertical LEDs With Double Diffuse Surfaces[J].IEEE Journal of Quantum Electronics,2006(12):1196-1201. |
| [18] | 李一博,郭霞,关宝路,揣东旭,沈光地.基于Au/Au直接键合的高亮度ODRLED[J].固体电子学研究与进展,2009(03):399-402,449. |
| [19] | C.H. Lin;C.F. Lai;T.S. Ko;H.W. Huang;H.C. Kuo;Y.Y. Hung;K.M. Leung;C.C. Yu;R.J. Tsai;C.K. Lee;T.C. Lu;S.C. Wang .Enhancement of InGaN&#8211;GaN Indium&#8211;Tin&#8211;Oxide Flip-Chip Light-Emitting Diodes With TiO<tex>$_2$</tex>&#8211;SiO<tex>$_2$</tex>Multilayer Stack Omnidirectional Reflector[J].IEEE Photonics Technology Letters,2006(19):2050-2052. |
| [20] | Ray-Hua Horng;Shao-Hua Huang;Chuang-Yu Hsieh;Xinhe Zheng;Dong-Sing Wuu .Enhanced Luminance Efficiency of Wafer-Bonded InGaN–GaN LEDs With Double-Side Textured Surfaces and Omnidirectional Reflectors[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,2008(11):1116-1123. |
| [21] | L.W. Wu;S.J. Chang;Y.K. Su;R.W. Chuang;Y.P. Hsu;C.H. Kuo;W.C. Lai;T.C. Wen;J.M. Tsai;J.K. Sheu .In_(0.23)Ga_(0.77)N/GaN MQW LEDs with a low temperature GaN cap layer[J].Solid-State Electronics,2003(11):2027-2030. |
| [22] | 刘娉娉,武锐,武胜利,王强,柯志杰.聚苯乙烯球掩膜干法粗化提高LED发光效率[J].半导体技术,2010(03):260-263. |
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